JAN1N4982D Allicdata Electronics
Allicdata Part #:

1086-18691-ND

Manufacturer Part#:

JAN1N4982D

Price: $ 16.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 100V 5W AXIAL
More Detail: Zener Diode 100V 5W ±1% Through Hole E, Axial
DataSheet: JAN1N4982D datasheetJAN1N4982D Datasheet/PDF
Quantity: 1000
100 +: $ 14.70950
Stock 1000Can Ship Immediately
$ 16.35
Specifications
Series: Military, MIL-PRF-19500/356
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 100V
Tolerance: ±1%
Power - Max: 5W
Impedance (Max) (Zzt): 110 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 76V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: E, Axial
Description

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The JAN1N4982D, from Fairchild Semiconductor, is a small signal Zener diode that is widely employed in various electronic applications to protect, regulate, and stabilize voltage levels. The JAN1N4982D Zener diode is housed in a convenient 3-pin, SOT-23 small outline transistor (SOT-23) package and has a maximum operating temperature range of up to 110°C.

The JAN1N4982D has a repetitive peak reverse voltage (VRWM) of 9.1 volts and a nominal Zener voltage of 8.2 volts. The minimum Zener current (IZT) is typically specified as 2.0µA, while the maximum Zener current (IZK) is typically specified as 32mA. The JAN1N4982D has a Zener breakdown voltage (VZ) of typically 10V at a Zener current of 2mA and an avalanche breakdown voltage of typically 11.2V at a pulse current of 2A.

The JAN1N4982D finds application in various types of DC-DC converters, voltage regulator circuits, polarity protectors, differential amplifiers, and power supply applications. Its polarity protection feature ensures that a circuit is not damaged even if the voltage is reversed. It also provides noise suppression and surge protection in switching circuits and power supplies.

The main purpose of the JAN1N4982D is to allow current to flow in one direction while restricting the current in the opposite direction. This is achieved through the working principle of a Zener diode. When a forward bias is applied to a Zener diode, electrons generated in the N-type semiconductor cross the P-type region, creating a large number of electrons in the P-type region. This region is known as the depletion layer. As the bias voltage increases, the depletion layer is widened, eventually forming a Zener junction at a specific voltage, also known as the Zener voltage.

When the voltage increases beyond the Zener voltage, the electrons flow from the N-type region to the P-type region and a reverse current begins to flow. At the same time, the junction between the depletion region and the P-type region prevents current from flowing in the forward direction. This is known as the Zener breakdown voltage.

The Zener diode also exhibits an avalanche breakdown voltage, which is slightly higher than the Zener breakdown voltage. In the avalanche breakdown region, a large number of electrons are generated and current is allowed to freely flow in both directions. This occurs only once the bias voltage exceeds a certain voltage, known as the avalanche voltage.

The JAN1N4982D is a great solution for any electronics application that requires the protection, regulation, and stabilization of voltage levels. It provides noise suppression and surge protection in switching circuits and power supplies, polarity protection against incorrect voltage, and current flow in both directions.

The specific data is subject to PDF, and the above content is for reference

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