Allicdata Part #: | JAN1N5416S-ND |
Manufacturer Part#: |
JAN1N5416 |
Price: | $ 5.96 |
Product Category: | Uncategorized |
Manufacturer: | Semtech Corporation |
Short Description: | D MET 3A FAST 100V |
More Detail: | N/A |
DataSheet: | JAN1N5416 Datasheet/PDF |
Quantity: | 1000 |
150 +: | $ 5.42132 |
Series: | * |
Part Status: | Active |
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The JAN1N5416 is a fast-acting, axial-lead, thru-hole, epitaxial silicon rectifier diode. It is an efficient rectifier device that can provide high-speed switching and reverse voltage protection for DC and AC applications. This device is widely used in power supply systems, high-speed communications, electro-magnetic induction, and other related areas.
The JAN1N5416 has a very simple working principle. When a forward voltage is applied, electrons flow from the anode to the cathode, creating a forward current through the device. The reverse voltage has no effect on the device, so no current flows. When the forward voltage is removed, the device turns off.
The JAN1N5416 has a variety of application fields. It is frequently used in dc/dc converters, DC/AC inverter circuits, and radio frequency amplifiers. It is also used in signal conditioning circuits, which require short rise times and pinpoint curve changes between input and output signals. In addition, it is useful in power supplies, as well as in circuits where limiting the current and voltage is important.
The JAN1N5416’s solid performance is due to its wide variety of features and specifications. Its maximum peak pulse current rating is 2 A, and its peak forward surge current rating is 3 A. The device can also switch at up to 1,500 volts. It is also available in a variety of round and square package sizes.
In conclusion, the JAN1N5416 is a reliable and efficient device that can be used for a wide range of applications. Its fast switching, reverse voltage protection, and variety of features make it an ideal choice for a variety of uses. With its high peak currents and voltage ratings, it can provide reliable protection for sensitive electronic components.
The specific data is subject to PDF, and the above content is for reference
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JAN1N6168A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 91.2V 165.1V C ... |
JAN1N6169A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 98.8V 178.8V C ... |
JAN1N6171A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 121.6V 218.4V C... |
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JAN1N6144US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 17.75V C S... |
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JAN1N6146US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 22.05V C ... |
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JAN1N6147US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 12.2V 23.42V C ... |
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