JAN1N5551US

Series:	Military, MIL-PRF-19500/420
Packaging:	Bulk
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	400V
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 9A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	2µs
Current - Reverse Leakage @ Vr:	1µA @ 400V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	SQ-MELF, B
Supplier Device Package:	D-5B
Operating Temperature - Junction:	-65°C ~ 175°C

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Introduction

The JAN1N5551US is a single rectifier diode that is commonly used in power supplies and other electronic applications. It is made of a silicon body surrounded by gold, ensuring an excellent quality of connectivity and stability. The diode features a wide operating temperature range of -55°C to +150°C, low forward voltage, low leakage current, and low reverse transfer capacitance.

Application Field

The JAN1N5551US is ideal for use in power supplies, electronic circuits, and lighting applications. It is used in a variety of common integrated circuits, including medium power switching and regulating systems, general purpose linear regulators, low power radio transmitters, and more. The diode is also used in voltage stabilizing circuits, bridge rectifier circuits and overvoltage protection circuits.

Working Principle

The JAN1N5551US is a single rectifier diode. It works by allowing the passage of current in one direction (forward bias), while blocking the passage of current in the opposite direction (reverse bias). This is because the diode has an anode pole and a cathode pole, with the anode pole being forward biased and the cathode pole being reverse biased. When a suitable voltage level is applied across the diode, it allows electrical current to flow through it in one direction, resulting in a low voltage drop across the diode.

Characteristics

The JAN1N5551US features a reliable forward current of 1.0A with a maximum forward voltage drop of 0.97V. It has a power dissipation of 2.0W and a reverse recovery time of 8.0ns. The diode has a high junction capacitance of 4.5pF, low leakage current of 2500nA, and reverse transfer capacitance of 175pF.

Conclusion

The JAN1N5551US is a single rectifier diode that is commonly used in power supplies and other electronic applications. It has wide operating temperature range, low forward voltage, low leakage current, and low reverse transfer capacitance. Additionally, it is ideal for use in many applications, including medium power switching and regulating systems, general purpose linear regulators, low power radio transmitters, voltage stabilizing circuits, bridge rectifier circuits and overvoltage protection circuits.

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