JAN1N5552US Allicdata Electronics
Allicdata Part #:

1086-19414-ND

Manufacturer Part#:

JAN1N5552US

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 600V 3A B-MELF
More Detail: Diode Standard 600V 3A Surface Mount D-5B
DataSheet: JAN1N5552US datasheetJAN1N5552US Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Operating Temperature - Junction: -65°C ~ 175°C
Series: Military, MIL-PRF-19500/420
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Description

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Diodes are semiconductor devices that allow for current to flow in one direction, and are widely used for applications such as rectification, voltage regulation, and signal isolation. The JAN1N5552US diode is a single rectifier diode from Texas Instruments and is designed for applications where a discrete diode is needed, such as power supplies, and circuit protection.

Applications

The JAN1N5552US is designed for many rectification and voltage regulation applications. It is well suited for applications such as high-frequency power rectification, DC-to-DC converters, secondary overvoltage protection, and voltage level shifting to name a few. The device is also widely used in a variety of power supplies as a switching or rectifying element. Its low reverse leakage makes it particularly well-suited for applications that require soft start, like power-up voltage sequencing.

Because the device is packaged in a dual-in-line package, the JAN1N5552US is commonly used in consumer electronics and home appliances that require a robust electrical connection, such as TVs, radios, and microwaves. It is also commonly used in audio and video equipment, as well as automotive and aerospace electrical systems.

Features

The JAN1N5552US is a standard single rectifier diode with an average forward current (IF) of 1.0 ampere, an average forward voltage (VF) of 1.1 volts, and a maximum reverse voltage (VR) of 400 volts. It also has an ultra low leakage (<1uA @ 1V) that helps make it perfect for soft-start applications. Additionally, the JAN1N5552US has a low thermal resistance so that it can remain stable at high operating temperatures.

The device also has a low power consumption and can be operated over a wide voltage range. It also has a high frequency switching capability and low threshold voltage, making it well suited for a wide variety of applications.

Working Principle

The JAN1N5552US operates by allowing the current to flow in only one direction, while blocking the current in the opposite direction. This type of diode is known as a rectifier diode and is used mainly for rectification purposes, such as in AC to DC conversion.

The JAN1N5552US consists of a semiconductor material, usually silicon, that is “doped” to form a layer of either N-type or P-type material. These layers form the diode’s “P-N junction”, which forms the basis for how the diode works.

When a voltage is applied to the diode, electrons and holes are drawn across the P-N junction. If a forward bias voltage is applied, the P-N junction allows current to flow (“rectification”). If a reverse bias voltage is applied, the diode blocks current flow by preventing electrons and holes from crossing the barrier.

The JAN1N5552US is designed to endure high-frequency switching and still maintain excellent reliability. Its low leakage also helps to minimize power loss during operation, making it an ideal choice for use in power supplies and other power applications.

The specific data is subject to PDF, and the above content is for reference

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