Allicdata Part #: | 1086-19740-ND |
Manufacturer Part#: |
JAN1N6163US |
Price: | $ 15.06 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 56V 108.26V C SQ-MELF |
More Detail: | N/A |
DataSheet: | JAN1N6163US Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 13.68670 |
Voltage - Clamping (Max) @ Ipp: | 108.26V |
Supplier Device Package: | C, SQ-MELF |
Package / Case: | SQ-MELF, C |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 13.78A |
Series: | Military, MIL-PRF-19500/516 |
Voltage - Breakdown (Min): | 67.74V |
Voltage - Reverse Standoff (Typ): | 56V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS (transient voltage suppressors) is a kind of semiconductor protection device designed to protect electronic circuits from transient voltage caused by events such as electromagnetic pulses and electrostatic discharges. The JAN1N6163US is specifically designed to protect low-voltage electronic circuits from transient overvoltage. It is a unidirectional device with excellent power handling and clamping characteristics.
The JAN1N6163US has an operating voltage range from 5V to 60V, with a maximum peak pulse power of 500W and a working peak pulse current of 8A. The device is designed to quickly and reliably clamp transient voltages to protect electronic circuits from damage. It is equipped with a low capacitance internal structure for fast response and low charge injection over a wide frequency range.
The JAN1N6163US also has a wide breakdown voltage range varying from 5V to 65V, which provides greater flexibility in selecting the proper device for each application. It features a very low dynamic resistance and ultra-fast response time, which provides effective protection against a wide range of transients. The device also has low leakage current and low junction capacitance for improved EMI/RFI performance.
The working principle of the JAN1N6163US is based on a simple three-terminal configuration, consisting of a cathode (anode), an anode (cathode) and a gate terminal. When a transient voltage is applied to the anode and cathode terminals, a current flows through the device and the voltage is clamped to a safe level to protect the device and the connected circuit. The gate terminal is used to control the device’s clamp voltage, allowing adjustment for proper protection.
The JAN1N6163US is ideal for applications that require low voltage protection, such as in communications, automotive, and other consumer electronics. It can also be used in sensitive electronic circuits, such as microprocessors, FPGAs, ASICs and memory ICs, where protection is required against surges, overvoltage, electrostatic discharge, and other transient voltage threats.
Overall, the JAN1N6163US is an excellent low-voltage transient voltage suppressor designed to provide reliable protection against a wide range of transient events. The device has a wide operating voltage range, a wide range of breakdown voltages, an ultra-fast response time, excellent power handling, and low leakage current. It is an ideal choice for low-voltage protection applications, such as those found in communications, automotive, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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JAN1N6158A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 35.8V 64.6V C A... |
JAN1N6163A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 56V 103.1V C AX... |
JAN1N6172A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136.8V 245.7V C... |
JAN1N6466 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
JAN1N6466US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V B S... |
JAN1N6467 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.3V 63.5V AXI... |
JAN1N6467US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.3V 63.5V B S... |
JAN1N6469 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 9V AXIAL |
JAN1N6469US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 9V GMELF |
JAN1N6474 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
JAN1N6164A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 62.2V 112.8V C ... |
JAN1N6165A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 69.2V 125.1V C ... |
JAN1N6166A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 76V 137.6V C AX... |
JAN1N6167A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 86.6V 151.3V C ... |
JAN1N6168A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 91.2V 165.1V C ... |
JAN1N6169A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 98.8V 178.8V C ... |
JAN1N6171A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 121.6V 218.4V C... |
JAN1N6173A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 152V 273V C AXI... |
JAN1N6142US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 7.6V 15.23V C S... |
JAN1N6143AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 15.6V C SQ... |
JAN1N6143US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 16.38V C S... |
JAN1N6144AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 16.9V C SQ... |
JAN1N6144US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 17.75V C S... |
JAN1N6145AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 18.2V C SQ... |
JAN1N6145US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 19.11V C S... |
JAN1N6146AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 21V C SQ-... |
JAN1N6146US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 22.05V C ... |
JAN1N6147AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 12.2V 22.3V C S... |
JAN1N6147US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 12.2V 23.42V C ... |
JAN1N6148AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 13.7V 25.1V C S... |
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