JAN1N6313

Series:	Military, MIL-PRF-19500/533
Part Status:	Active
Voltage - Zener (Nom) (Vz):	3.6V
Tolerance:	±5%
Power - Max:	500mW
Impedance (Max) (Zzt):	25 Ohms
Current - Reverse Leakage @ Vr:	3µA @ 1V
Voltage - Forward (Vf) (Max) @ If:	1.4V @ 1A
Operating Temperature:	-65°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	B, Axial
Supplier Device Package:	DO-35 (DO-204AH)

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Diodes - Zener - Single

The JAN1N6313 is a single zener diode manufactured and marketed by leading semiconductor manufacturer ON Semiconductor. It is available as a device with 500mW dissipation capacity and voltage ranges from 8.2V to 82V in 12 discrete increments. By connecting the zener diode in reverse bias across the load, it forms a voltage regulator circuit, giving a very stable output voltage. As the current through the device increases, the voltage across the diode tends to approach the zener voltage and remain constant.The JAN1N6313 is an ideal voltage-stabilisation device for various application fields. Due to its robust and reliable construction, it is an ideal choice for aerospace, defence and other high-reliability applications. It can be used in power supply circuits, transducers, wave form generators, motor-driver circuits and instrumentation circuits. It is also often used in transistor stabilisation circuits, where it helps maintain the specified value of collector-emitter voltage across the transistor circuit by controlling zener voltage.The working principle for the JAN1N6313 is based on the specific properties of zener diodes. A zener diode is a specially designed diode that has a low and reverse biased voltage breakdown capability. By forming a reverse-biased p-n junction, zener diodes exhibit an abrupt voltage breakdown when the reverse bias voltage exceeds a certain value. The breakdown voltage of a zener diode is determined by the dopants used in the diode structure and is indicated by the manufacturer on the diode package.In the JAN1N6313, the dopants in the p-n junction control the breakdown voltage of the device. Application of the reverse bias voltage causes the depletion region of the junction to expand and form a Zener breakdown over the junction. When the reverse bias voltage exceeds a certain value (as determined by the doping of the junction), a large amount of current flows through the junction and the voltage across it is maintained at a constant value known as the Zener voltage. The Zener voltage of the device can be adjusted by modifying the doping concentration of the junction.The JAN1N6313 device is an ideal choice for many applications due to its advantages over other types of diodes. Its small size and high power dissipation allows for easy assembly into small and highly integrated designs. Its low leakage current and voltage dispersion (due to high-bandgap materials specially selected for the device) helps it achieve a very high performance and stability. Its temperature coefficient is also lower than that of other zener diodes, making it ideal for temperature-critical applications.In summary, the JAN1N6313 is a single zener diode from ON Semiconductor. It is designed to provide a very stable output voltage across a load by means of a simple reverse biased voltage regulator circuit. It is ideally suited for aerospace, defence and high-reliability applications due to its robust construction. The device’s performance and stability are further enhanced by its low leakage current, lower temperature coefficient and its ability to dissipate 500mW of power.

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