Allicdata Part #: | 1086-19860-ND |
Manufacturer Part#: |
JAN1N6329US |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 16V 500MW B-SQ MELF |
More Detail: | Zener Diode 16V 500mW ±5% Surface Mount B, SQ-MELF |
DataSheet: | JAN1N6329US Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/533 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Voltage - Zener (Nom) (Vz): | 16V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 12 Ohms |
Current - Reverse Leakage @ Vr: | 50µA @ 12V |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, B |
Supplier Device Package: | B, SQ-MELF |
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The JAN1N6329US is a diode specifically designed for equipment protection and voltage regulation in industrial, automotive, communications, and other appliactions. Its primary function is to protect sensitive components in a system from excessive voltages and currents that could cause permanent damage. Additionally, it can be used as a voltage regulator to ensure steady, consistent output voltages.
Overview:
The JAN1N6329US is a small signal diode that is specially designed for high reliability and large surge current handling capabilities. It is a packaged in a surface-mounted mechanical package for sturdy mounting and protection. The device has a V(BR) of 9.1 volts and a maximum peak forward current of 600mA, allowing it to handle high surge currents with limited dissipation. The junction temperature coefficient of the device is -0.14%/°C, providing linear regulation even in extreme temperature conditions.
Application Field:
The JAN1N6329US can be used in a variety of industrial, automotive, and communications applications where device protection and voltage regulation are desired. It can be used as a snubber diode, where it is put in parallel with other sensitive components to protect them from high surge currents. It can also be used as a voltage regulator to ensure steady, consistent output voltages.
The device is particularly suitable for applications where high reliability and surge current handling capabilities are essential. Its small signal diode package makes it ideal for surface-mounted designs, and its thermal coefficient of -0.14%/°C makes it suitable for temperature-regulated conditions.
Working Principle:
The JAN1N6329US works on the principle of reversed biased p-n junction. When a voltage is applied across the device in the forward direction, current flows through the device and the voltage across the device is about 9.1v. When the reverse bias is applied the diode becomes reverse biased and no significant current flows through the device. The reverse breakdown voltage (Vb) of the device is 9.1 volts.
The device is capable of limiting the voltage across it to 9.1v or below and also to regulate its current output. The device is designed for high surge current capability, which enables it to protect sensitive equipment from high voltage and current transients. Its junction temperature coefficient of -0.14%/°C allows it to provide linear regulation over a wide temperature range.
Conclusion:
The JAN1N6329US is a small signal diode that is specifically designed for high reliability and large surge current handling capabilities. It can be used in a variety of industrial, automotive, and communications applications where devices protection and voltage regulation are desired. It works on the principle of reversed biased p-n junction and it has a V(BR) of 9.1 volts and a maximum peak forward current of 600mA. Its junction temperature coefficient of -0.14%/°C allows it to provide linear regulation over a wide temperature range.
The specific data is subject to PDF, and the above content is for reference
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