![JAN1N6465US Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
JAN1N6465US Circuit Protection |
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Allicdata Part #: | 1086-2275-ND |
Manufacturer Part#: |
JAN1N6465US |
Price: | $ 12.12 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 24V 41.4V B SQ-MELF |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 11.01530 |
Voltage - Clamping (Max) @ Ipp: | 41.4V |
Supplier Device Package: | B, SQ-MELF |
Package / Case: | SQ-MELF, B |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 69A (8/20µs) |
Series: | Military, MIL-PRF-19500/551 |
Voltage - Breakdown (Min): | 27V |
Voltage - Reverse Standoff (Typ): | 24V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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The JAN1N6465US is a unidirectional Transient Voltage Suppressor device (TVS). They are designed to protect sensitive electrical components exposed to transient over-voltage conditions, which can damage the component and can even cause failure. The device absorbs the transient voltages that are typically seen during lightning strikes, power supply faults, electrostatic discharge (ESD) and even solar radiation. These transients can exceed the normal operating voltage range of the electronics. It is important to note that TVS Diodes are unidirectional devices, meaning that they allow current to pass in one direction only and not the other.
The JAN1N6465US is a silicon-avalanche diode based on the Zener diode principle. It offers a low breakdown voltage of 3.3V and working voltage of 6.8V. It is designed to operate over a wide temperature range and has a very low leakage current of less than 1µA when operating at 25ºC. The device also has a very fast response time of less than 2ns. It has a peak power rating of 5.0W and is UL recognized.
The primary application field for the JAN1N6465US device is in the protection of electrical components against transient overvoltage conditions. This device can be used for electrical circuit protection on lithium ion batteries, automotive systems, semiconductor components, electronic equipment, and telecommunications systems. It is also suitable for use in power supply circuits, power management circuits, and driving circuits. Additionally, it can be used in high-speed data applications such as cameras, phone signals, and radio frequencies.
The basic principle behind the operation of the JAN1N6465US device is that of a Zener diode. When the normal operating voltage of the circuit is exceeded, the device will act to absorb the excess voltage. This is done by using a special silicon-based material that is connected in reverse across the power supply line. This material is designed to break down when a certain voltage level is exceeded, providing an avalanche breakdown effect and allowing the energy of the transient to be dissipated safely. The device then reverts back to its original state after the transient has passed.
In summary, the JAN1N6465US is a unidirectional Transient Voltage Suppressor device (TVS) designed to protect sensitive electrical components against transient overvoltage conditions. It utilizes the Zener diode principle with a low breakdown voltage of 3.3V, a working voltage of 6.8V, and an ultra-fast response time of less than 2ns. It is widely used for protection in automotive systems, semiconductor components, electronic equipment, and telecommunications systems.
The specific data is subject to PDF, and the above content is for reference
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JAN1N6169A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 98.8V 178.8V C ... |
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JAN1N6144AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 16.9V C SQ... |
JAN1N6144US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 17.75V C S... |
JAN1N6145AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 18.2V C SQ... |
JAN1N6145US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 19.11V C S... |
JAN1N6146AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 21V C SQ-... |
JAN1N6146US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 22.05V C ... |
JAN1N6147AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 12.2V 22.3V C S... |
JAN1N6147US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 12.2V 23.42V C ... |
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