JAN1N6465US Allicdata Electronics

JAN1N6465US Circuit Protection

Allicdata Part #:

1086-2275-ND

Manufacturer Part#:

JAN1N6465US

Price: $ 12.12
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 24V 41.4V B SQ-MELF
More Detail: N/A
DataSheet: JAN1N6465US datasheetJAN1N6465US Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.01530
Stock 1000Can Ship Immediately
$ 12.12
Specifications
Voltage - Clamping (Max) @ Ipp: 41.4V
Supplier Device Package: B, SQ-MELF
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 69A (8/20µs)
Series: Military, MIL-PRF-19500/551
Voltage - Breakdown (Min): 27V
Voltage - Reverse Standoff (Typ): 24V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JAN1N6465US is a unidirectional Transient Voltage Suppressor device (TVS). They are designed to protect sensitive electrical components exposed to transient over-voltage conditions, which can damage the component and can even cause failure. The device absorbs the transient voltages that are typically seen during lightning strikes, power supply faults, electrostatic discharge (ESD) and even solar radiation. These transients can exceed the normal operating voltage range of the electronics. It is important to note that TVS Diodes are unidirectional devices, meaning that they allow current to pass in one direction only and not the other.

The JAN1N6465US is a silicon-avalanche diode based on the Zener diode principle. It offers a low breakdown voltage of 3.3V and working voltage of 6.8V. It is designed to operate over a wide temperature range and has a very low leakage current of less than 1µA when operating at 25ºC. The device also has a very fast response time of less than 2ns. It has a peak power rating of 5.0W and is UL recognized.

The primary application field for the JAN1N6465US device is in the protection of electrical components against transient overvoltage conditions. This device can be used for electrical circuit protection on lithium ion batteries, automotive systems, semiconductor components, electronic equipment, and telecommunications systems. It is also suitable for use in power supply circuits, power management circuits, and driving circuits. Additionally, it can be used in high-speed data applications such as cameras, phone signals, and radio frequencies.

The basic principle behind the operation of the JAN1N6465US device is that of a Zener diode. When the normal operating voltage of the circuit is exceeded, the device will act to absorb the excess voltage. This is done by using a special silicon-based material that is connected in reverse across the power supply line. This material is designed to break down when a certain voltage level is exceeded, providing an avalanche breakdown effect and allowing the energy of the transient to be dissipated safely. The device then reverts back to its original state after the transient has passed.

In summary, the JAN1N6465US is a unidirectional Transient Voltage Suppressor device (TVS) designed to protect sensitive electrical components against transient overvoltage conditions. It utilizes the Zener diode principle with a low breakdown voltage of 3.3V, a working voltage of 6.8V, and an ultra-fast response time of less than 2ns. It is widely used for protection in automotive systems, semiconductor components, electronic equipment, and telecommunications systems.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "JAN1" Included word is 40
Part Number Manufacturer Price Quantity Description
JAN1N6104US Microsemi Co... 0.0 $ 1000 TVS DIODE 6.2V 12.71V B S...
JAN1N6105US Microsemi Co... 0.0 $ 1000 TVS DIODE 6.9V 14.07V B S...
JAN1N6109US Microsemi Co... 0.0 $ 1000 TVS DIODE 9.9V 19.11V B S...
JAN1N6112US Microsemi Co... 0.0 $ 1000 TVS DIODE 13.7V 26.36V B ...
JAN1N6113AUS Microsemi Co... 0.0 $ 1000 TVS DIODE 15.2V 27.7V B S...
JAN1N6115US Microsemi Co... 0.0 $ 1000 TVS DIODE 18.2V 34.97V B ...
JAN1N6116US Microsemi Co... 0.0 $ 1000 TVS DIODE 20.6V 39.27V B ...
JAN1N6129A Microsemi Co... 0.0 $ 1000 TVS DIODE 69.2V 125.1V AX...
JAN1N6139A Microsemi Co... 0.0 $ 1000 TVS DIODE 5.7V 11.2V C AX...
JAN1N6149A Microsemi Co... 0.0 $ 1000 TVS DIODE 15.2V 27.7V C A...
JAN1N6158A Microsemi Co... 0.0 $ 1000 TVS DIODE 35.8V 64.6V C A...
JAN1N6163A Microsemi Co... 0.0 $ 1000 TVS DIODE 56V 103.1V C AX...
JAN1N6172A Microsemi Co... 0.0 $ 1000 TVS DIODE 136.8V 245.7V C...
JAN1N6466 Microsemi Co... 0.0 $ 1000 TVS DIODE 30.5V 47.5V AXI...
JAN1N6466US Microsemi Co... 0.0 $ 1000 TVS DIODE 30.5V 47.5V B S...
JAN1N6467 Microsemi Co... 0.0 $ 1000 TVS DIODE 40.3V 63.5V AXI...
JAN1N6467US Microsemi Co... 0.0 $ 1000 TVS DIODE 40.3V 63.5V B S...
JAN1N6469 Microsemi Co... 0.0 $ 1000 TVS DIODE 5V 9V AXIAL
JAN1N6469US Microsemi Co... 0.0 $ 1000 TVS DIODE 5V 9V GMELF
JAN1N6474 Microsemi Co... 0.0 $ 1000 TVS DIODE 30.5V 47.5V AXI...
JAN1N6164A Microsemi Co... 15.04 $ 1000 TVS DIODE 62.2V 112.8V C ...
JAN1N6165A Microsemi Co... 15.04 $ 1000 TVS DIODE 69.2V 125.1V C ...
JAN1N6166A Microsemi Co... 15.04 $ 1000 TVS DIODE 76V 137.6V C AX...
JAN1N6167A Microsemi Co... 15.04 $ 1000 TVS DIODE 86.6V 151.3V C ...
JAN1N6168A Microsemi Co... 15.04 $ 1000 TVS DIODE 91.2V 165.1V C ...
JAN1N6169A Microsemi Co... 15.04 $ 1000 TVS DIODE 98.8V 178.8V C ...
JAN1N6171A Microsemi Co... 15.04 $ 1000 TVS DIODE 121.6V 218.4V C...
JAN1N6173A Microsemi Co... 15.04 $ 1000 TVS DIODE 152V 273V C AXI...
JAN1N6142US Microsemi Co... 15.06 $ 1000 TVS DIODE 7.6V 15.23V C S...
JAN1N6143AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 8.4V 15.6V C SQ...
JAN1N6143US Microsemi Co... 15.06 $ 1000 TVS DIODE 8.4V 16.38V C S...
JAN1N6144AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 9.1V 16.9V C SQ...
JAN1N6144US Microsemi Co... 15.06 $ 1000 TVS DIODE 9.1V 17.75V C S...
JAN1N6145AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 9.9V 18.2V C SQ...
JAN1N6145US Microsemi Co... 15.06 $ 1000 TVS DIODE 9.9V 19.11V C S...
JAN1N6146AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 11.4V 21V C SQ-...
JAN1N6146US Microsemi Co... 15.06 $ 1000 TVS DIODE 11.4V 22.05V C ...
JAN1N6147AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 12.2V 22.3V C S...
JAN1N6147US Microsemi Co... 15.06 $ 1000 TVS DIODE 12.2V 23.42V C ...
JAN1N6148AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 13.7V 25.1V C S...
Latest Products
SMCJ6053/TR13

TVS DIODE 31V 56.4V DO214AB

SMCJ6053/TR13 Allicdata Electronics
VTVS8V5GSMF-HM3-18

TVS DIODE 8.5V 13.5V DO219AB

VTVS8V5GSMF-HM3-18 Allicdata Electronics
MRT100KP350CAE3

TVS DIODE 350V 690V CASE 5A

MRT100KP350CAE3 Allicdata Electronics
MRT100KP170CA

TVS DIODE 170V 334V CASE 5A

MRT100KP170CA Allicdata Electronics
MP6KE8.2AE3

TVS DIODE 7.02V 12.1V T-18

MP6KE8.2AE3 Allicdata Electronics
MP5KE78AE3

TVS DIODE 78V 126V DO204AL

MP5KE78AE3 Allicdata Electronics