Allicdata Part #: | 1086-15995-ND |
Manufacturer Part#: |
JAN1N649-1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 600V 400MA DO35 |
More Detail: | Diode Standard 600V 400mA Through Hole DO-35 |
DataSheet: | JAN1N649-1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/240 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 400mA |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 400mA |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 50nA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes - Rectifiers - Single
The JAN1N649-1 is a single diode rectifier manufactured by Texas Instruments. It is an axial lead, diffusion-sealed device made with a two-stage diffused alloy junction to optimize performance. This part is suitable for general-purpose switching,rectification, and surge protection in small to medium power DC and AC applications. This article will discuss the application field and working principle of the JAN1N649-1 device.
Application Field
The JAN1N649-1 device is applicable for general switching, rectification, and surge protection in small to medium power DC and AC applications. It provides a fast switching action without requiring an additional surge protection circuit to prevent voltage transients in the power supply. It also replaces single-diode bridge rectifiers in applications that require a lower forward voltage drop than a conventional bridge rectifier. Additionally, it is suitable for use in electrical carts, line-powered AC adapters, switch mode power supplies, and AC-DC converters.
Working Principle
The JAN1N649-1 device is essentially a diode that has been designed to provide efficient switching action and enhanced surge protection. It is constructed from two general purpose N-channel metal-oxide-semiconductor (MOS) transistors that are electrically connected together and then placed in parallel. The two MOS transistors are controlled by two external signals, one for forward bias (input) and one for reverse bias (output). When the forward bias voltage is applied to the anode of the device, the MOS transistor switches on and allows current to flow through the diode. Conversely, when a reverse bias voltage is applied to the cathode of the device, the MOS transistor switches off and prevents current flow. In summary, the JAN1N649-1 device is a single diode rectifier that provides a fast switching and surge protection characteristic in small to medium power DC and AC applications.
Conclusion
This article discussed the application field and working principle of the JAN1N649-1 device, a single diode rectifier manufactured by Texas Instruments. This device is suitable for general switching, rectification, and surge protection in small to medium power DC and AC application. The JAN1N649-1 is constructed from two general purpose N-channel MOS transistors connected in parallel and is controlled by two external signals for forward and reverse bias. In conclusion, the JAN1N649-1 device is an effective solution for small to medium power applications requiring an efficient switching and surge protection characteristic.
The specific data is subject to PDF, and the above content is for reference
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