JAN1N6626U Allicdata Electronics
Allicdata Part #:

1086-19978-ND

Manufacturer Part#:

JAN1N6626U

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 200V 1.75A E-MELF
More Detail: Diode Standard 200V 1.75A Surface Mount D-5B
DataSheet: JAN1N6626U datasheetJAN1N6626U Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/590
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 200V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Description

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Diodes - Rectifiers - Single

The JAN1N6626U is a single diode, rectifier-style device specifically designed for high current applications. The device has a low forward voltage drop and a reverse flathead power dissipation of 180µA. It is constructed with a silicon die, with a hermetic seal and two terminals. The JAN1N6626U is capable of rapid switching on/off current carrying circuits, providing high-efficiency and low operating temperature.

Features

  • Low forward voltage drop
  • Low power dissipation
  • High current handling capability
  • Low operating temperature
  • Hermetically sealed package

Applications

  • High current switch applications
  • Automotive lighting
  • Audio amplifier circuits
  • Power rectification
  • Mouse, keyboard, and other communication interface circuits
  • High speed data processing applications

Working principle

The JAN1N6626U is essentially a single diode, rectifier-style device, meaning it is capable of providing both unidirectional and bidirectional current flows. The device works by allowing current to flow in one direction through the diode, and blocking current in the reverse direction. When the current flow is forward-biased, electrons flow from the N-type semiconductor material to the P-type arrangement and current flows. This forward current will continue until its maximum limit is reached, with the JAN1N6626U able to handle up to 6 Amps.

When the current flow is reversed or reverse-biased, the device stops allowing current to flow by blocking off any current in the reverse direction. The reverse voltage of the device is specified as 6V, and above this level, the device is open and current flow is blocked. This makes the JAN1N6626U an ideal device for rapidly switching current carrying circuits and ensures that the efficiency of the device stays high and the operating temperature stays low.

The specific data is subject to PDF, and the above content is for reference

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