Allicdata Part #: | 1086-2303-ND |
Manufacturer Part#: |
JAN1N6626US |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 220V 1.75A D5B |
More Detail: | Diode Standard 220V 1.75A Surface Mount D-5B |
DataSheet: | JAN1N6626US Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/590 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 220V |
Current - Average Rectified (Io): | 1.75A |
Voltage - Forward (Vf) (Max) @ If: | 1.35V @ 1.2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 2µA @ 220V |
Capacitance @ Vr, F: | 40pF @ 10V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, E |
Supplier Device Package: | D-5B |
Operating Temperature - Junction: | -65°C ~ 150°C |
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The JAN1N6626US is a single rectifier diode specially designed for high-reliability automotive and commercial applications. It has a reverse voltage rating of 60V and a forward current rating of 2A. It is particularly suited for use in DC/DC converters, power line over-voltage protection, high power applications, and anywhere fast switching action and low forward voltage drop are required. It can be used in both surface-mount and through-hole designs, making it a versatile and popular choice.
The JAN1N6626US has a silicon epitaxial layer construction that allows for high temperature operation and high surge current capability. It has a low forward voltage drop of just 0. 5V and can handle peak reverse power dissipation up to 2.5W. This makes it optimal for applications such as DC/DC converters, power line protection, and discrete voltage switches.
The JAN1N6626US is designed with a guard ring construction to protect against damage from electrostatic discharge (ESD) and surges. This guard ring construction provides excellent current carrying capability, efficient energy dissipation, and low junction-to case thermal resistance. It also has an open junction structure which allows for high switching speeds and good immunity from punch-through.
The working principle of the JAN1N6626US is simple. When a forward bias voltage is applied, it produces a low forward voltage drop and a high surge current capability. The diode also has the ability to quickly switch off when the forward bias is removed. This fast switching off allows the diode to act as a “fast on-off switch” in applications such as DC/DC converters and voltage switches.
The JAN1N6626US is a popular choice due to its high reliability, and its numerous application fields. It is commonly used in DC/DC converter and UPS systems, automotive and consumer electronics, and in many other applications. Due to its low forward voltage drop, high surge current capability, and short switching times, the JAN1N6626US can be used in any circuit requiring fast on-off switching capabilities.
In conclusion, the JAN1N6626US is an excellent choice for a single rectifier diode due to its high reliability and versatile use in multiple application fields. With its guard ring construction and open junction structure, it provides excellent current carrying capability, efficiency and protection from ESD and overvoltages. The low forward voltage drop and high surge current capability also allow it to be used as a “fast on-off switch” in many different applications, making it an excellent and popular choice.
The specific data is subject to PDF, and the above content is for reference
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