Allicdata Part #: | 1086-19984-ND |
Manufacturer Part#: |
JAN1N6628U |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 600V 1.75A E-MELF |
More Detail: | Diode Standard 600V 1.75A Surface Mount D-5B |
DataSheet: | JAN1N6628U Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/590 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1.75A |
Voltage - Forward (Vf) (Max) @ If: | 1.35V @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 2µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, E |
Supplier Device Package: | D-5B |
Operating Temperature - Junction: | -65°C ~ 150°C |
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JAN1N6628U is a common diode belonging to the single rectifier family. Its uses are wide and varied, but the underlying function is always the same-- it enables the flow of current in only one direction.
In power supplies, JAN1N6628Us are commonly used in bridge rectifier circuits to convert alternating current (AC) to direct current (DC). They are designed to be able to withstand high voltage and current, and they have a low voltage drop that makes them ideal for high-efficiency power supplies.
JAN1N6628Us are also used in protection circuits. They are used to protect sensitive components such as integrated circuits from damage due to overvoltage or voltage spikes caused by transients.
The underlying working principle of the JAN1N6628U can be summarized as follows: in forward mode, the anode is at a higher voltage than the cathode and the diode allows current to flow from the anode to the cathode; in reverse mode, the cathode is at a higher voltage than the anode and the diode prevents current from flowing. This behavior is the result of the P-N junction behavior of the diode.
The P-N junction is formed from two different types of semiconductor material—N-type and P-type. When the P-type region is connected to a positive voltage source and the N-type region is connected to a negative voltage source, an electric field is created across the junction. The electric field causes electrons to leave the N-type material and move toward the P-type material, leaving behind positively charged holes in the N-type material. This creates a barrier across the junction that prevents current from flowing in the opposite direction.
In forward mode, the anode is at a higher voltage than the cathode and the electric field at the P-N junction is reversed, causing the P-N junction to act as a closed switch. This causes the electrons to move from the P-type material to the N-type material, creating a conductive path for current to flow from the anode to the cathode.
In reverse mode, the voltage at the anode is lower than at the cathode and the electric field at the P-N junction is not reversed. This prevents the electrons from flowing, and no current can flow in the reverse direction.
In either mode of operation, the P-N junction of the JAN1N6628U maintains a low voltage drop, which helps reduce the power consumption of the circuit. The size and shape of the diode also makes it ideal for high-current rectification applications.
Overall, the JAN1N6628U is a versatile diode, capable of withstanding high voltages and currents, and providing efficient rectification and protection in a range of different applications.
The specific data is subject to PDF, and the above content is for reference
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