JAN1N6629 Allicdata Electronics
Allicdata Part #:

1086-2307-ND

Manufacturer Part#:

JAN1N6629

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 880V 1.4A AXIAL
More Detail: Diode Standard 880V 1.4A Through Hole
DataSheet: JAN1N6629 datasheetJAN1N6629 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/590
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 880V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 800V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: E, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JAN1N6629 is a single, ultra-fast, high-efficiency silicon rectifier diode. This device is a 1 Watt power rectifier and is capable of blocking voltage in excess of 60 volts. It utilizes a proton-implanted P-type semiconductor for the anode and a N-type semiconductor for the cathode. This device is extremely versatile and can be used in a variety of applications, from RF power rectifier diodes to medical and industrial electro-mechanical applications.

The JAN1N6629 rectifier diode works by using a combination of a negative bias voltage and a high-frequency electromagnetic field. This combination forms a PN junction between the two semiconductor materials, with the P-type material facing the anode, and the N-type material facing the cathode. The electromagnetic field is then used to create a high-speed flow of electrons. As the electrons move through the PN junction, they are then forced to move in a directional current. The current then follows the design configuration of the diode, flowing from the anode to the cathode.

One of the primary advantages of the JAN1N6629 rectifier is its extremely high efficiency in rectifying power. Its low forward voltage drop of just 0.4 volts and its outstanding reverse recovery time of just 4 nanoseconds means it can convert AC power to DC power at a rate of up to 95%. It is also capable of blocking voltage in excess of 60 volts and can handle a maximum current rating of 1 milliamp.

The JAN1N6629 is a versatile rectifier diode with a wide range of applications. It can be used in just about any situation where rectification of AC power is necessary, such as medical equipment, laser power supplies, RF power amplifiers and high-frequency/high-voltage switching applications. It is also capable of providing power distribution and rectification in automotive, industrial and military applications.

The JAN1N6629 rectifier diode is a versatile and highly efficient power-rectifying device. Its ultra-fast reverse recovery time and high-efficiency make it ideal for numerous applications in both the commercial and industrial sectors. It is capable of providing an unlimited number of applications, from RF power rectifier diodes to medical and industrial electro-mechanical applications. Thanks to its versatility and high-quality construction, the JAN1N6629 is an excellent choice for any application requiring a reliable, high-efficiency power rectifying device.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "JAN1" Included word is 40
Part Number Manufacturer Price Quantity Description
JAN1N6104US Microsemi Co... 0.0 $ 1000 TVS DIODE 6.2V 12.71V B S...
JAN1N6105US Microsemi Co... 0.0 $ 1000 TVS DIODE 6.9V 14.07V B S...
JAN1N6109US Microsemi Co... 0.0 $ 1000 TVS DIODE 9.9V 19.11V B S...
JAN1N6112US Microsemi Co... 0.0 $ 1000 TVS DIODE 13.7V 26.36V B ...
JAN1N6113AUS Microsemi Co... 0.0 $ 1000 TVS DIODE 15.2V 27.7V B S...
JAN1N6115US Microsemi Co... 0.0 $ 1000 TVS DIODE 18.2V 34.97V B ...
JAN1N6116US Microsemi Co... 0.0 $ 1000 TVS DIODE 20.6V 39.27V B ...
JAN1N6129A Microsemi Co... 0.0 $ 1000 TVS DIODE 69.2V 125.1V AX...
JAN1N6139A Microsemi Co... 0.0 $ 1000 TVS DIODE 5.7V 11.2V C AX...
JAN1N6149A Microsemi Co... 0.0 $ 1000 TVS DIODE 15.2V 27.7V C A...
JAN1N6158A Microsemi Co... 0.0 $ 1000 TVS DIODE 35.8V 64.6V C A...
JAN1N6163A Microsemi Co... 0.0 $ 1000 TVS DIODE 56V 103.1V C AX...
JAN1N6172A Microsemi Co... 0.0 $ 1000 TVS DIODE 136.8V 245.7V C...
JAN1N6466 Microsemi Co... 0.0 $ 1000 TVS DIODE 30.5V 47.5V AXI...
JAN1N6466US Microsemi Co... 0.0 $ 1000 TVS DIODE 30.5V 47.5V B S...
JAN1N6467 Microsemi Co... 0.0 $ 1000 TVS DIODE 40.3V 63.5V AXI...
JAN1N6467US Microsemi Co... 0.0 $ 1000 TVS DIODE 40.3V 63.5V B S...
JAN1N6469 Microsemi Co... 0.0 $ 1000 TVS DIODE 5V 9V AXIAL
JAN1N6469US Microsemi Co... 0.0 $ 1000 TVS DIODE 5V 9V GMELF
JAN1N6474 Microsemi Co... 0.0 $ 1000 TVS DIODE 30.5V 47.5V AXI...
JAN1N6164A Microsemi Co... 15.04 $ 1000 TVS DIODE 62.2V 112.8V C ...
JAN1N6165A Microsemi Co... 15.04 $ 1000 TVS DIODE 69.2V 125.1V C ...
JAN1N6166A Microsemi Co... 15.04 $ 1000 TVS DIODE 76V 137.6V C AX...
JAN1N6167A Microsemi Co... 15.04 $ 1000 TVS DIODE 86.6V 151.3V C ...
JAN1N6168A Microsemi Co... 15.04 $ 1000 TVS DIODE 91.2V 165.1V C ...
JAN1N6169A Microsemi Co... 15.04 $ 1000 TVS DIODE 98.8V 178.8V C ...
JAN1N6171A Microsemi Co... 15.04 $ 1000 TVS DIODE 121.6V 218.4V C...
JAN1N6173A Microsemi Co... 15.04 $ 1000 TVS DIODE 152V 273V C AXI...
JAN1N6142US Microsemi Co... 15.06 $ 1000 TVS DIODE 7.6V 15.23V C S...
JAN1N6143AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 8.4V 15.6V C SQ...
JAN1N6143US Microsemi Co... 15.06 $ 1000 TVS DIODE 8.4V 16.38V C S...
JAN1N6144AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 9.1V 16.9V C SQ...
JAN1N6144US Microsemi Co... 15.06 $ 1000 TVS DIODE 9.1V 17.75V C S...
JAN1N6145AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 9.9V 18.2V C SQ...
JAN1N6145US Microsemi Co... 15.06 $ 1000 TVS DIODE 9.9V 19.11V C S...
JAN1N6146AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 11.4V 21V C SQ-...
JAN1N6146US Microsemi Co... 15.06 $ 1000 TVS DIODE 11.4V 22.05V C ...
JAN1N6147AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 12.2V 22.3V C S...
JAN1N6147US Microsemi Co... 15.06 $ 1000 TVS DIODE 12.2V 23.42V C ...
JAN1N6148AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 13.7V 25.1V C S...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics