Allicdata Part #: | 1086-2307-ND |
Manufacturer Part#: |
JAN1N6629 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 880V 1.4A AXIAL |
More Detail: | Diode Standard 880V 1.4A Through Hole |
DataSheet: | JAN1N6629 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/590 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 880V |
Current - Average Rectified (Io): | 1.4A |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1.4A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 2µA @ 800V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | E, Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The JAN1N6629 is a single, ultra-fast, high-efficiency silicon rectifier diode. This device is a 1 Watt power rectifier and is capable of blocking voltage in excess of 60 volts. It utilizes a proton-implanted P-type semiconductor for the anode and a N-type semiconductor for the cathode. This device is extremely versatile and can be used in a variety of applications, from RF power rectifier diodes to medical and industrial electro-mechanical applications.
The JAN1N6629 rectifier diode works by using a combination of a negative bias voltage and a high-frequency electromagnetic field. This combination forms a PN junction between the two semiconductor materials, with the P-type material facing the anode, and the N-type material facing the cathode. The electromagnetic field is then used to create a high-speed flow of electrons. As the electrons move through the PN junction, they are then forced to move in a directional current. The current then follows the design configuration of the diode, flowing from the anode to the cathode.
One of the primary advantages of the JAN1N6629 rectifier is its extremely high efficiency in rectifying power. Its low forward voltage drop of just 0.4 volts and its outstanding reverse recovery time of just 4 nanoseconds means it can convert AC power to DC power at a rate of up to 95%. It is also capable of blocking voltage in excess of 60 volts and can handle a maximum current rating of 1 milliamp.
The JAN1N6629 is a versatile rectifier diode with a wide range of applications. It can be used in just about any situation where rectification of AC power is necessary, such as medical equipment, laser power supplies, RF power amplifiers and high-frequency/high-voltage switching applications. It is also capable of providing power distribution and rectification in automotive, industrial and military applications.
The JAN1N6629 rectifier diode is a versatile and highly efficient power-rectifying device. Its ultra-fast reverse recovery time and high-efficiency make it ideal for numerous applications in both the commercial and industrial sectors. It is capable of providing an unlimited number of applications, from RF power rectifier diodes to medical and industrial electro-mechanical applications. Thanks to its versatility and high-quality construction, the JAN1N6629 is an excellent choice for any application requiring a reliable, high-efficiency power rectifying device.
The specific data is subject to PDF, and the above content is for reference
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