JAN1N753AUR-1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A diode is a semiconductor device that primarily consists of two layers of a semiconductor material separated by an intermediate region, called a junction. Diodes have a variety of characteristics, depending on their type and construction, including their polarity and current conduction properties. Generally speaking, diodes exhibit asymmetric conduction properties, meaning that current flows relatively easily in one direction, but not in the other.

The JAN1N753AUR-1 is a Zener Diode which operates in the Single direction, as opposed to Bidirectional or Avalanche Zener Diodes which are designed to allow current to flow in both directions. The device is designed to operate in either a Reverse Break Down or a Low Voltage regulation application. In its Reverse Break Down application, the device will clamp the voltage at a certain level, specified by the diode\'s Zenner voltage, when the voltage on the anode exceeds the Zenner Voltage. In a Low Voltage regulation application, the device will maintain a fairly constant output voltage even when the input voltage varies by a wide range.

The primary component of the JAN1N753AUR-1 is a p-n junction which consists of two layers of semiconductive material. The positive layer consists of a donor impurity, such as donor dopant or Arsenic, and the negative layer is composed of an acceptor impurity such as Acceptor Dopant or Bismuth. The junction between the two layers forms the diode and acts as a barrier to current flow. The resistive properties of the junction, when a voltage is applied, then determines the device\'s characteristics.

The operation of the JAN1N753AUR-1 can be explained using the concept of electric fields. When a voltage is applied to the diode, an electric field is generated inside the junction, which separates the charge carriers of opposite polarity from each other. The field is determined by the reverse breakdown voltage of the diode. When the applied voltage exceeds the reverse breakdown voltage, the electric field becomes too strong, causing the depletion region of the diode to become wider, creating a low-resistance path for electrons to flow through.

In a reverse break down situation, the depletion region of the diode expands and the current flowing through the diode can be limited due to the decrease in the resistance of the device. This prevents further voltage increases and the voltage is then clamped to the Zenner voltage. In a Voltage regulation application, the diode is operated in the reverse break down region, but at a lower voltage than the Zenner Voltage. This can be done by either adding a series resistance in the circuit or decreasing the current, allowing the device to regulate the output voltage.

In summary, the JAN1N753AUR-1 is a single-direction Zener diode designed to operate in either reverse break down or low voltage regulation applications. The device relies on a p-n junction which creates an electric field to determine its breakdown voltage, and the device can be used to regulate the voltage for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference