Allicdata Part #: | 1086-20433-ND |
Manufacturer Part#: |
JAN1N973D-1 |
Price: | $ 4.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 33V 500MW DO35 |
More Detail: | Zener Diode 33V 500mW ±1% Through Hole DO-35 (DO-2... |
DataSheet: | JAN1N973D-1 Datasheet/PDF |
Quantity: | 1000 |
182 +: | $ 3.68588 |
Series: | Military, MIL-PRF-19500/117 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±1% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 58 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 25V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 (DO-204AH) |
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Diodes - Zener - Single: JAN1N973D-1 Application Field and Working Principle
A Zener diode is a special type of diode that, when connected in reverse bias, allows current to flow in the forward direction when the applied voltage reaches the reverse breakdown or “Zener” voltage, Vz. In this paper, we will explore the JAN1N973D-1, its application Field and working Principle.
JAN1N973D-1
The JAN1N973D-1 is a silicon, planar Zener diode fabricated on semiconductor wafer technology. The device is designed to regulate, control, and protect circuits from voltage impairment.
General Specifications
The JAN1N973D-1 has improved electrical characteristics including power dissipation, leakage current, and transient voltage. The device provides greater electrical stability and low noise. It also provides more protection against very high temperatures, radiation, and abrasion.
- Package: DO-41
- Voltage: 3.9 V
- Power: 350 mW
- Temperature: -55 to +150C
Application Field
The JAN1N973D-1 is designed for use in a variety of applications. It can be use to provide over-voltage protection, stabilizer voltage, and prevent power supply from excessive overload. The device is also commonly used for voltage regulator protection and has been adopted for data line protection, automotive electronics, and military applications.
Operating Principles
When the JAN1N973D-1 is connected in reverse bias, it operates in the Zener region. The reverse breakdown voltage, Vz, is determined by the junction properties of the device. When the applied voltage V reaches the Zener voltage, the depletion region expands and allows current to flow in the forward direction. When the applied voltage is reduced, the depletion region shrinks and the current is blocked.
The device is also capable of operation in the Avalanche region when a excessive large voltage is applied across the diode. In this mode of operation, minority carriers within the depletion region are accelerated to sufficient speeds, resulting in increased current conduction in the forward bias direction.
Conclusion
The JAN1N973D-1 is a silicon, planar Zener diode designed for use in a variety of applications. It is capable of operating in both the Zener and Avalanche regions. When connected in reverse bias, it regulates, controls, and protects circuits from voltage impairment. It is adopted for data line protection, automotive electronics, and military applications.
The specific data is subject to PDF, and the above content is for reference
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