Allicdata Part #: | 1086-20436-ND |
Manufacturer Part#: |
JAN1N973DUR-1 |
Price: | $ 9.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 33V 500MW DO213AA |
More Detail: | Zener Diode 33V 500mW ±1% Surface Mount DO-213AA |
DataSheet: | JAN1N973DUR-1 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 8.78171 |
Series: | Military, MIL-PRF-19500/117 |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±1% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 58 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 25V |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AA (Glass) |
Supplier Device Package: | DO-213AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A JAN1N973DUR-1 diode is a single Zener diode designed to regulate the reversing power flow in electrical circuits. It is a semiconductor device that uses the Zener effect to allow current to flow in only one direction across the diode. This type of diode, also known as a Zener diode, is commonly used in voltage regulation and power distribution applications due to its highly efficient operation.
The JAN1N973DUR-1 diode is designed to protect electrical components from high-voltage surges, short circuits and induction from external magnetic fields. It is constructed from silicon and a small number of other materials and can support voltages up to 1W. This makes the diode ideal for applications such as wiring and overvoltage protection, voltage regulation and power distribution.
The working principle of the JAN1N973DUR-1 diode begins as soon as a forward-going current reaches its PN junction. When this happens, the junction starts to conduct a current in both directions. This occurs because the electric current will flow in the direction of the electric field, which creates an inverted electric field on the other side of the junction, allowing electrons to move freely across the junction.
As the current increases, the width and the height of the reversed voltage inside the JAN1N973DUR-1 diode start to decrease. This process continues until the reverse voltage value reaches the breakdown point of the diode, also known as the Zener voltage. When the breakdown point is reached, the electric current begins to flow in the reverse direction, allowing the diode to regulate the voltage.
The JAN1N973DUR-1 diode is the most efficient Zener diode available on the market, with a very low reverse leakage current and a high power handling capability, which makes it ideal for applications where a high-quality, reliable and cost-effective power regulator is required. As such, it can be used in a variety of electrical applications to provide protection from high-voltage surges, ensure precise voltage regulation and reduce the risk of power outages.
In summary, the JAN1N973DUR-1 diode is a highly efficient single Zener diode designed for use in a variety of electrical applications, such as voltage regulation, power distribution and wiring protection. It is designed to protect electrical components from high-voltage surges, short circuits and induction from external magnetic fields, and is constructed from silicon and a small number of other materials. Thanks to its highly efficient operation and low reverse leakage current, it is an ideal choice for precise voltage regulation and power distribution applications.
The specific data is subject to PDF, and the above content is for reference
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