KSC1674COBU Allicdata Electronics
Allicdata Part #:

KSC1674COBU-ND

Manufacturer Part#:

KSC1674COBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANSISTOR NPN 20V 20MA TO-92
More Detail: RF Transistor NPN 20V 20mA 600MHz 250mW Through Ho...
DataSheet: KSC1674COBU datasheetKSC1674COBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: --
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: KSC1674
Description

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The KSC1674COBU is a device that is classified as a Radio Frequency (RF) bipolar junction transistor (BJT). This device operates in the frequency range of 300 to 1000 MHz, making it suitable for applications in the area of wireless communication, especially those applications that use multiple antennas. The KSC1674COBU has a maximum power dissipation of 1 watt and supplies a base-emitter voltage of 2.8V.

The KSC1674COBU is a specalized transistor that is extremely compact and lightweight. It has a high speed performance that allows it to operate without distortion in the high frequencies it is capable of. This device is ideal for applications that require small size and low frequency distortion.

The KSC1674COBU is able to work with a very low voltage, which makes it ideal for applications such as mobile phones, wireless devices, and consumer electronics. The KSC1674COBU also has an internal epitaxial construction, which reduces the dissipation of power without compromising on performance. This device also has a low noise level, which makes it suitable for use in applications that require high signal-to-noise ratios.

The working principle of the KSC1674COBU is that the base-emitter voltage forms the voltage source, while the collector-emitter voltage provides the current. When a voltage is applied to the base-emitter junction, a current flows through the collector-emitter junction, which in turn causes current to flow through the device. The collector-emitter voltage of the device is also affected by the voltage applied to the base-emitter junction. The base-emitter junction, collector-emitter junction, and gate-source junction cooperate to provide the low voltage and low power operation that make the device so suitable for many applications.

The KSC1674COBU is suitable for many different applications, including amplifiers, oscillators, receivers, amplifiers/oscillators, modulators/demodulators, and frequency dividers. In amplifiers, the device can provide a wide frequency range of up to 1000 MHz with extremely low levels of distortion. In oscillators, it can provide frequencies up to 1GHz with extremely low levels of noise. Finally, in receivers, the device can provide gains of up to 10dB with low levels of noise. The KSC1674COBU is an extremely versatile device that can be employed in a wide variety of RF applications.

The KSC1674COBU is an outstanding device designed to provide an affordable solution for many different RF applications. This device is extremely compact and lightweight, making it well-suited for applications in the area of wireless communication. It has an internal epitaxial construction that results in low power dissipation and high speed performance. It offers a wide range of frequencies and low levels of noise, making it ideal for use in applications requiring high signal-to-noise ratios. The KSC1674COBU is an exceptional device that is capable of providing a great deal of versatility for many applications.

The specific data is subject to PDF, and the above content is for reference

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