Allicdata Part #: | KSC1730OBU-ND |
Manufacturer Part#: |
KSC1730OBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR NPN 15V 50MA TO-92 |
More Detail: | RF Transistor NPN 15V 50mA 1.1GHz 250mW Through Ho... |
DataSheet: | KSC1730OBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 1.1GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 10V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSC1730 |
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The KSC1730OBU application field and working principle, while belonging to the device type of Transistors – Bipolar (BJT) – RF, is important in many industrial, commercial and private settings.
To understand the KSC1730OBU application field and working principle, it is important to have an understanding of transistors. A transistor is a semiconductor device that can switch or amplify electrical energy. In essence, a transistor is an electrical switch which can be used either to control current flow or to increase an incoming signal voltage. Transistors are divided into two main categories, Bipolar (BJT) and Field Effect (FET). Of these two types, field effect transistors are more commonly used in commercial products because of their lower power consumption and higher switching speed.
The KSC1730OBU is a type of bipolar transistor that is designed for use in radio frequency (RF) applications. The KSC1730OBU has several advantages over other types of transistors. It has a low input impedance, which allows it to operate at higher frequencies, and a high-power rating, which can accommodate higher input currents. Additionally, the KSC1730OBU has a relatively low noise figure, making it a good choice for use in low-noise applications.
The working principle of the KSC1730OBU is similar to that of other bipolar transistors. It consists of a base, an emitter, and a collector. The base is the input p-n-p junction, the emitter is the output n-p-n junction, and the collector is the negative power supply from which current is drawn or returned. When a voltage is applied to the base, electrons start flowing from the emitter to the base. This results in a current flow from the collector to the emitter, and a voltage drop across the base-emitter junction. This voltage drop is known as the base-emitter voltage (VBE).
The KSC1730OBU is especially useful in RF applications due to its low noise figure and other attributes. Its two-junction construction also increases circuit efficiency and stability. In addition, it is able to operate at higher frequencies than some other transistor types. This makes it well suited for use in high-frequency radio circuits.
The KSC1730OBU application field can be found in many different devices and systems, such as cell phones, cordless phones, and satellite receivers. It is also used in designs that require high switching speeds and high power levels. The KSC1730OBU can also be used in low-noise receivers, such as home theatre products. This is due to its low noise figure, which helps reduce interference.
In summary, the KSC1730OBU application field and working principle from the device type of Transistors – Bipolar (BJT) – RF, is an important component used in many different settings. It can be used for high-frequency switching and high-power applications due to its low-impedance, high-power rating, and low noise figure. This makes it an invaluable component in the world of electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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