KSC1674YTA Allicdata Electronics
Allicdata Part #:

KSC1674YTA-ND

Manufacturer Part#:

KSC1674YTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANSISTOR NPN 20V 20MA TO-92
More Detail: RF Transistor NPN 20V 20mA 600MHz 250mW Through Ho...
DataSheet: KSC1674YTA datasheetKSC1674YTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: --
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSC1674
Description

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Introduction

KSC1674YTA is a NPN silicon RF transistor designed for microwave applications. This transistor offers high power gain and an extended frequency range in a very small package. It is an ideal choice for applications that require some level of power efficiency, as well as a high level of performance. This article will discuss the applications and working principles of the KSC1674YTA transistor.

Applications of KSC1674YTA

The KSC1674YTA is primarily used in microwave applications such as wireless base stations, mobile phones, and satellite receivers. It is also suitable for portable radios, power amplifiers, and RF power applications. In addition to these applications, this transistor is also used as a voltage regulator in audio amplifiers and power supplies. Furthermore, its small size and high power gain makes it suitable for automotive and industrial applications.

Working Principle of KSC1674YTA

KSC1674YTA is a NPN, epitaxial silicon RF transistor. It operates in the high frequency range of 5 to 9 Ghz. The transistor has a high power gain of 12 dB that allows it to reach power levels of up to 10 watts. The collector current is typically around 8 amperes, with a maximum current of 10 amperes. The transistor\'s small size and high power gain allows it to be used in low-cost RF applications.

This transistor is designed to operate with an input power of up to 28V. It is constructed with a dielectric material that provides an additional step of insulation between the collector and the base. The transistor uses a constant isolated-base architecture which helps to reduce thermal runaway. The transistor is also designed for low noise, with a low noise figure of just 0.5 dB. This ensures that the output signal is clean and accurate.

Conclusion

The KSC1674YTA is a NPN silicon RF transistor designed for microwave applications. It offers high power gain and an extended frequency range in a very small package. This transistor is used for applications such as wireless base stations, mobile phones, satellite receivers, portable radios, power amplifiers, RF power applications, and audio amplifiers. The transistor operates with an input power of up to 28V and has a collector current of 8-10 amperes. Its small size and high power gain makes it suitable for both consumer electronics and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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