KSC1845UBU Allicdata Electronics
Allicdata Part #:

KSC1845UBU-ND

Manufacturer Part#:

KSC1845UBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 120V 0.05A TO-92
More Detail: Bipolar (BJT) Transistor NPN 120V 50mA 110MHz 500m...
DataSheet: KSC1845UBU datasheetKSC1845UBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 1mA, 6V
Power - Max: 500mW
Frequency - Transition: 110MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: KSC1845
Description

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The KSC1845UBU is a type ofBipolar Junction Transistor (BJT) known as a Single Transistor. It isa type of semiconductor device used in many electronic systems andproducts to amplify signals or switch power supplies. BJTs are oftenused in amplifiers and oscillators to increase or maintain thestrength of a signal or to provide switching capabilities of a powersupply. BJT transistors are also popularly used in combination withother components to form complex electrical circuits and systems.The KSC1845UBU is an example of a single, NPN type BJT. It can beclassified as an NPN active device. An NPN active device ischaracterized by its four terminals: Collector, Emitter, Base andSubstrate. In the KSC1845UBU, the Base terminal serves as thecontrol terminal of the transistor, the Collector and Emitter areresponsible for the current flow in and out of the device, and theSubstrate serves as the contact point for the device.The KSC1845UBU is a robust device and can operate at high voltageand currents. It is capable of operating in a range of 0 to 50 voltsand currents up to 400mA. It can be used in a variety ofapplications, such as amplifiers, switching circuits, powerregulators, and so on. It is also used in audio and RF applicationswhere high power levels are required.The KSC1845UBU is an NPN transistor, which means it relies on thebase current (Ib) to control the collector current (Ic). When apositive voltage is applied to the Base terminal, current will flowfrom the Base to the Collector. This flow of current will cause avoltage drop from the Collector to the Emitter, which is known asVce. The magnitude of Vce is controlled by the ratio of Ib/Ic, andis determined by the load resistance in the circuit.The KSC1845UBU is designed to have a high current gain (hfe), whichis a measure of the transistor’s ability to amplify signals. Ingeneral, transistors with higher hfe values are more suitable foramplifier applications than ones with lower hfe values. The KSC1845UBUhas a hfe of 200, making it well suited for use in amplifiercircuits.Another important parameter of any transistor is its collectorsaturation voltage (Vce(sat)). This parameter is used to determinethe maximum output voltage of a transistor. The KSC1845UBU has a Vce(sat)of 0.3V, which is considered to be a very good value for a varietyof applications.The KSC1845UBU is a widely used and cost-effective transistor. Itis capable of operating in a variety of applications, such as powersupplies, amplifiers, and switching circuits. Its high current gainand low collector saturation voltage make it a suitable device foramplifier and power switching applications. Its robust design andeasy availability make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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