KSC1845EBU

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	120V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	400 @ 1mA, 6V
Power - Max:	500mW
Frequency - Transition:	110MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	KSC1845

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Introduction

KSC1845EBU is a single bipolar junction transistor (BJT) designed and manufactured by KEC. It is used in a range of applications including amplifier circuits, switching circuits and other applications. This article will provide an overview of the KSC1845EBU’s application field and working principles.

Types and Features of KSC1845EBU

The KSC1845EBU is a single-transistor amplifier device, with a current gain (hFE) range of 40 - 400. It exhibits stable characteristics, includes protection devices against dynamic capacitance, and is able to reduce noise generated by radiofrequency interference (RFI).The transistor is available in a TO-92 package and has a minimum collector current of 500 mA. The maximum operating temperature is specified at 70°C and the Maximum Collector-Emitter Voltage (VCE) is specified at 15V. The silicon chip is used for a variety of applications, including switch circuits, linear amplifier operations, and more.

Application Fields of KSC1845EBU

The KSC1845EBU can be used in a variety of amplifiers, including audio amplifiers, amplifiers for medical equipment, and amplifiers for AC power control. The transistor is also used in switching circuits and is suitable for applications in the motor control system, telecom equipment, and air conditioners.The device is also suitable for use in RFI suppression. It can be used to reduce EMI and RFI emissions from various circuits, such as video camera and switch mode power supplies (SMPS).

Working Principle of KSC1845EBU

The KSC1845EBU operates as an amplifier when employing a DC bias or AC signal. When a signal is applied at the base of the transistor, a current flow builds up at the base region and is further amplified at the collector side. With the help of a small base current, the transistor can be used to control a large current at the collector side.The transistor also exhibits high-frequency stability due to its low-noise characteristics. It is able to reject noise generated by nearby circuit components due to its high-impedance characteristics. The device is also protected against dynamic capacitance which can lead to reliability issues.

Conclusion

The KSC1845EBU is a single bipolar junction transistor (BJT) with a current gain (hFE) range of 40 - 400. It is suitable for amplifier circuits, switching circuits, and other applications. The device has a minimum collector current of 500 mA and a maximum operating temperature of 70°C. It is also suitable for RFI suppression and can be used to reduce EMI and RFI emissions from various circuits. The KSC1845EBU operates as an amplifier when employing a DC bias or AC signal. Its low-noise characteristics make it suitable for high-frequency stability and it is also protected against dynamic capacitance.

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