KSC1845FBU Allicdata Electronics
Allicdata Part #:

KSC1845FBU-ND

Manufacturer Part#:

KSC1845FBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 120V 0.05A TO-92
More Detail: Bipolar (BJT) Transistor NPN 120V 50mA 110MHz 500m...
DataSheet: KSC1845FBU datasheetKSC1845FBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Power - Max: 500mW
Frequency - Transition: 110MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: KSC1845
Description

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Introduction

KSC1845FBU is a single bipolar junction transistor (BJT) designed for a wide range of applications, including amplifiers, switches, relays and other electronic devices. It has low power consumption and can provide high gain signals. It has been used in a wide range of communications, industrial and consumer electronics equipment. The KSC1845FBU has a low switching threshold voltage, making it suitable for use in high-speed, low-voltage switching circuits.

Structure

KSC1845FBU is a single epitaxial silicon NPN transistor with two terminals and three regions. It has a small rated power dissipation of 0.6watt. It has a common emitter circuit, where the collector and base form the input, while the emitter forms the output of the transistor. The base is made up of a silicon substrate, while the emitter and collector are made up of an N-type semiconductor.

Characteristics

KSC1845FBU has a high current gain of 2.6A/V, a low current density of 0.03A/mm2, a temperature coefficient of 2.2mV/K and an operating temperature range of -55°C to 150°C. It also has a minimum breakdown voltage of 40V and a low forward voltage drop of 0.5V.

Application field

KSC1845FBU is used in a variety of applications, including amplifier, relay, switch and other electronic circuits. It can be used as an input for amplifiers for low-level signals. It is also used for switching circuits and as a driver for relays. It can also be used in drive circuits for stepper motors and other small DC motors.

Working principle

KSC1845FBU operates on the principle of the transistor effect. In this effect, a small current entering the base region controls the larger current passing through the emitter and collector regions. When a voltage is applied to the base, it creates a small current, which influences the larger current going through the emitter and collector. This changes the resistance between the emitter and collector, allowing current to flow and thus controlling the output current or voltage.

The specific data is subject to PDF, and the above content is for reference

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