KSC1675YS1TA

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 6V
Power - Max:	250mW
Frequency - Transition:	300MHz
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	KSC1675

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Transistors - Bipolar (BJT) - SingleThe KSC1675YS1TA is a type of bipolar junction transistor (BJT) used as a single component device for a range of electrical and electronic devices. It is used for amplifying or switching electrical signals. Its application field and working principle will be explained in the following parts.Application FieldKSC1675YS1TA is a plastic packaged BJT transistor and the main applications include amplifier, switch, and current and voltage regulators. This type of transistor is commonly used for low frequency applications such as audio amplifiers and pre-amplifiers and also as a high-current switch. It can also be used as a DC to DC converter and as a modulator of signals in various electronic circuits. This transistor is mainly used in consumer electronics and automotive applications where the requirement is low input capacitance, low output capacitance, low power consumption and a wide frequency range. Additionally, the transistor is used in switched-mode power supplies, communication systems, video systems and control systems.Working PrincipleThe KSC1675YS1TA transistor is based on the operation of a BJT, which is a three-terminal semiconductor device. It is formed when two types of doped semiconductor material are combined, creating two regions known as the base and the emitter. Doping these layers implies introducing impurities to the material, allowing it to be electrical conductive when an electric field is applied. The third layer, the collector, is then added to the device. In this type of transistor operation, current will flow between the emitter and the collector only if the base voltage is applied and the emitter-collector junction is forward biased. Electrons will flow from the emitter to the base and holes will flow from the base to the collector. When current flows from the emitter to the collector, it is known as the forward active mode. The reverse active mode occurs when the application of a voltage from the collector to the emitter. In this case, the electrons will flow from the collector to the base and the holes from the base to the emitter, with current flowing from the collector to the emitter. The reason why BJT transistors are used for amplifying signals is due to the current gain properties. This can be explained as the ratio of the collector current to the base current. This type of transistors has a current gain which is usually set to a value of 200, which means that the current gain of a KSC1675YS1TA is 200 times the base current when the collector-emitter voltage is constant. This makes BJTs highly suitable for low voltage, low power amplification or switching. In conclusion, the KSC1675YS1TA is a type of BJT transistor used as a single component device for a range of electrical and electronic devices. It is mainly used for low frequency applications such as audio amplifiers and pre-amplifiers and also as a high-current switch. Its operation is based on the arrangement of two types of doped semiconductor material, creating two regions (the base and the emitter) and the third layer, the collector. Its current gain properties makes it highly suitable for low voltage, low power amplification or switching.

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