KSC1009GBU Allicdata Electronics
Allicdata Part #:

KSC1009GBU-ND

Manufacturer Part#:

KSC1009GBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 140V 0.7A TO-92
More Detail: Bipolar (BJT) Transistor NPN 140V 700mA 50MHz 800m...
DataSheet: KSC1009GBU datasheetKSC1009GBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Power - Max: 800mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: KSC1009
Description

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Introduction

The KSC1009GBU is a NPN bipolar junction transistor (BJT). A BJT is a type of transistor consisting of three semiconductor layers. The first layer is called the emitter, and the other two, base and collector, define the transistor\'s operational characteristics.The KSC1009GBU was designed for use in high frequency operations, such as in radio frequency amplifiers in broadcast or two-way radio applications, and can carry currents up to 500mA. It is capable of dissipating power up to 500mW.

Operating Principle

When a small current is applied to the base of a BJT, the electrons in the emitter layer are driven by the base current, producing a large current from the collector to the emitter. This operation is called the forward-biased NPN transistor.The amount of current flowing from the collector to the emitter is controlled by the amount of base current applied. With no base current, no collector current can flow, and the transistor is said to be off.By applying a proper base current, a large current can be controlled in the collector-emitter path, turning the transistor on. The KSC1009GBU has a maximum collector current of 500mA, meaning that it can easily handle high power applications.

Application Fields

The KSC1009GBU can be used in many high frequency applications, such as amplifiers, or in low noise amplifiers (LNAs) used in two-way radios.It can also be used in various broadcast radio and television receivers and transmitters, as well as in wireless local area networks and cellular phone systems. The KSC1009GBU can also be used in high-frequency switching circuits, low-power oscillators and amplifiers, transceiver circuits and other applications requiring precise current control and high frequency operation.

Conclusion

The KSC1009GBU is a NPN bipolar junction transistor (BJT) which offers excellent performance in high frequency operations. Its maximum collector current is 500mA, allowing it to be used in applications requiring high power, such as amplifiers and LNAs used in two-way radios, wireless networks and cellular phone systems. The KSC1009GBU can also be used in various broadcast radio and television receivers and transmitters, as well as in high-frequency switching circuits, low-power oscillators and amplifiers, and transceiver circuits.

The specific data is subject to PDF, and the above content is for reference

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