KSC1674OBU Allicdata Electronics
Allicdata Part #:

KSC1674OBU-ND

Manufacturer Part#:

KSC1674OBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANSISTOR NPN 20V 20MA TO-92
More Detail: RF Transistor NPN 20V 20mA 600MHz 250mW Through Ho...
DataSheet: KSC1674OBU datasheetKSC1674OBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: --
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: KSC1674
Description

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The KSC1674OBU is a transistor, more specifically, a bipolar junction transistor that is used mainly for radio frequency (RF) applications. It is widely used in radio circuits and other components that involve RF signals and/or power, such as transmitters and receivers, and also amplifiers. The KSC1674OBU is made up of three layers of semi-conductive material, which are called emitter, base, and collector, in which the current flows between the emitter and collector through the base layer. The transistor is then packaged in a TO-92 case to protect it from external elements and to increase its temperature range.

The main principle of operation of a bipolar junction transistor is known as the cut-off region, the active region, and the saturation region. At the cut-off region, the transistor does not conduct any current and the gate voltage is less than the source voltage. In the active region, the transistor conducts a small current and the gate voltage is greater than the source voltage. The higher the gate voltage, the greater the current will be. In the saturation region, the transistor is said to be \'saturated\' and the gate voltage is higher than the source voltage, resulting in a large current flow. The voltage and current levels will depend on the characteristics of the transistor.

The KSC1674OBU transistor is especially suitable for use in several different applications. For example, it can be used as an amplifier, oscillator, mixer, and modulator in receivers and transmitters. Additionally, it can be used as an amplifier in power supplies and other circuit configurations. In order to find the best performance and stability, proper biasing must be applied. This includes selecting the appropriate voltage levels for the gate and source, as well as selecting the appropriate resistor values for current-limiting.

Apart from this, the KSC1674OBU is characterized with several characteristics that make it suitable for RF applications. The transistor has a very low noise figure, which reduces the noise level that other components will produce. It also has very good linearity, which will result in a low intermodulation distortion and good frequency response. Additionally, the transistor can easily handle high frequencies along with the bias current.

The KSC1674OBU is a versatile transistor and can be used in many RF circuit applications. Its characteristics make it an ideal choice for applications such as amplifiers, oscillators, mixers, and modulators. In order to achieve the best performance, proper biasing should be applied, as well as selecting the appropriate voltage levels and resistor values for current-limiting.

The specific data is subject to PDF, and the above content is for reference

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