Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	20V
Frequency - Transition:	600MHz
Noise Figure (dB Typ @ f):	3dB ~ 5dB @ 100MHz
Gain:	--
Power - Max:	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 1mA, 6V
Current - Collector (Ic) (Max):	20mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	KSC1674

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Transistors - Bipolar (BJT) - RF KSC1674OTA Application Field and Working Principle

The KSC1674OTA is a radio frequency (RF) transistor complete with an internal bias network and integrated fusing details, making it an ideal choice for a wide range of RF-related applications. It\'s one of the most commonly used transistors in the world due to its many advantages. This article will provide a brief overview of the KSC1674OTA\'s application fields, working principles, and major features.

Application Field

The RF KSC1674OTA is a general-purpose bipolar junction transistor (BJT) designed for robustly handling power signals with high power-added efficiency. As such, it finds wide use in a variety of applications such as

• Broadcast receiver IF amplifier
• Cellular and satellite radio broadcasting, etc.

Since it is a BJT, it can be used in several ways, such as an RF amplifier, an RF switch, or a linear DC amplifier or voltage regulator. Its compact design and high-performance characteristics are well suited for use in mobile radios and other communication systems.

Working Principle

A bipolar junction transistor is an electronic device that contains three terminals – collector, emitter, and base – through which current can flow when an electric signal is applied. The RF KSC1674OTA is a widely used BJT that is characterized by its effective current gain, speedy switching ability, and high-power efficiency. When the voltage applied to its base terminal is increased, it allows current to flow from its collector to the emitter. The speed of this current flow is determined by the transistors\' fusing details, which can be adjusted to control the speed and current of the output signal. With its internal bias network, the device creates an easy to use and reliable transistor.

Major Features

The RF KSC1674OTA is a highly reliable and efficient transistor that operates at frequencies up to 900 MHz. Its main characteristics include:

• Power Added Efficiency: The KSC1674OTA provides up to 35.5 dBm of power added efficiency (PAE), allowing for high-power operation with reduced energy consumption.
• High Gain: The RF KSC1674OTA provides up to 40 dB of gain at 1.0GHz, allowing for efficient and consistent power delivery.
• Fusing Details: The device is equipped with integrated fusing details that can be adjusted to control the speed and current of the output signal. This helps to ensure that the transistor is operating at its optimal level.
• Compact Design: The RF KSC1674OTA has a compact and lightweight design to help reduce the overall size of the application.
• High Reliability: The transistor is backed by a number of advanced technologies to ensure maximum reliability and superior performance.

The KSC1674OTA is an extremely dependable and powerful transistor ideal for numerous RF-related applications. It utilizes the latest technology to keep its performance levels consistent and efficient. The compact design, robust power efficiency, and adjustable fusing details make it an excellent choice for many RF projects.

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