Allicdata Part #: | KSC1730OTA-ND |
Manufacturer Part#: |
KSC1730OTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR NPN 15V 50MA TO-92 |
More Detail: | RF Transistor NPN 15V 50mA 1.1GHz 250mW Through Ho... |
DataSheet: | KSC1730OTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 1.1GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 5mA, 10V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSC1730 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The KSC1730 OTA application field is wide and its working principle offers significant advantages over other components in this particular sector. Bipolar transistors are widely used for RF applications due to their small size, low power consumption, and excellent integration potential. The KSC1730OTA is one type of NPN bipolar junction transistor, and it is specially designed for high- DC gain accuracy, low redistribution noise, low output resistance, and good stability.
KSC1730OTA transistors are commonly used in antenna switching, AGC, electronic attenuation, and other RF circuits. With its small size and low power consumption, it is ideal for portable devices that require high frequency operation. The transistors can also be used in wireless communication systems, such as Bluetooth and Wi-Fi, as well as for general purpose switching.
The purpose of the OTA is to transfer signals from the input stage to the output stage. This is achieved by using an active device, in this case the KSC1730OTA, that acts as the interface between the two. The signal is transferred using a feedback circuit that is tuned to the desired frequency. The signal is then amplified by the device and output to the next stage.
The key features of the KSC1730OTA are its high DC gain accuracy and low average output resistance. The device has a wide dynamic range and can handle high frequency signals with accuracy. It also features low power consumption, making it suitable for battery-powered applications and extended field operation. Furthermore, the device is built using a ceramic package that is resistant to shock and vibration.
The working principle of the KSC1730OTA is based on bipolar junction transistors (BJT). BJTs are the building blocks of almost all types of amplifiers and are commonly found in many RF applications. They consist of three terminals (emitter, collector, and base) and work by controlling the current flow from the emitter to the collector through the base. The current travels from the base to the emitter and is amplified by the transistor.
In the case of the KSC1730OTA, the base is connected to an input signal, the collector is connected to the output, and the emitter is connected to the ground. The voltage that is applied to the base affects the current flow between the collector and emitter. As the input voltage increases, the current through the transistor increases, resulting in an amplification of the input signal. The output signal is then transferred to the next stage.
KSC1730OTA transistors offer many advantages compared to other components in the RF industry. Its small size, low power consumption, and high gain make it ideal for use in a variety of applications. Furthermore, its built-in features provide good temperature stability and reliability. As such, it is an excellent choice for RF circuits that require accuracy and low noise.
The specific data is subject to PDF, and the above content is for reference
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