KSE13003ASTU

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

KSE13003ASTU is a type of single bipolar junction transistor (BJT) designed for surface mount technology. It is designed for use in a variety of analog and digital applications, such as radio-frequency (RF) amplifiers and control circuits.

A bipolar junction transistor is a three-terminal device composed of two P-type semiconductor materials separated by an N-type material. This type of transistor, by controlling the voltage or current at the base (control) terminal, is used to amplify and switch electronic signals. It is capable of producing larger gain and can be used in a variety of amplifier configurations. Additionally, because BJT has a low supply voltage and low power consumption, it is very popular in portable electronics and consumer applications.

KSE13003ASTU is a high-speed, low-noise, high-voltage PNP transistor designed for general-use, high-frequency applications in the telecoms industry. It is constructed with an NPN silicon chip, which is sealed in hermetically sealed plastic packages and has been optimized for RF switch and amplifier applications. The transistor has an active region consisting of a single P-type layer of semiconductor material sandwiched between two N-type layers. This allows the transistor to amplify signals with relatively small fluctuations in voltage or current.

The KSE13003ASTU transistor provides excellent frequency response, low noise level, large current gain (β), and high-speed switching capability. Additionally, it has low capacitance as well as high isolation resistance, making it ideal for RF applications. It has a minimum operating temperature of -55°C, making it applicable for use in portable electronics. The device is also designed to be highly reliable and robust for long-term operation.

The working principle of the KSE13003ASTU transistor involves the control of the current flow from the collector to the emitter by the voltage applied at the base. This type of transistor is biased when a bias voltage is applied to the base and the collector, causing the current to flow from the collector to the emitter. As the bias voltage changes, the current flow also changes, thus modulating the current that is coupled from the base to the emitter. This modulation in current causes a variation of the output voltage at the emitter, thus amplifying the input signal.

The typical circuit configuration of the KSE13003ASTU includes a bias voltage source at the base and the collector and an input signal at the emitter. When a small input signal is applied to the emitter, it creates a base current that causes a variation in the current flowing from the collector to the emitter. This variation is then amplified and coupled out at the emitter, resulting in an amplified output signal. By varying the bias voltage, different operating points can be obtained, thus allowing for different amplification levels.

KSE13003ASTU is a single bipolar junction transistor designed for use in a wide variety of analog and digital applications. It provides excellent frequency response, low noise level, high current gain (β), and high-speed switching capability, making it ideal for RF applications. Additionally, it has a low supply voltage and low power consumption, making it well suited for use in portable electronics. As such, it can be used in a variety of amplifier configurations for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference