Allicdata Part #: | KSE182PWD-ND |
Manufacturer Part#: |
KSE182PWD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR NPN 80V DIP |
More Detail: | Bipolar (BJT) Transistor NPN 80V 3A 500MHz 1.5W |
DataSheet: | KSE182PWD Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1.7V @ 600mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 1V |
Power - Max: | 1.5W |
Frequency - Transition: | 500MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
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The KSE182PWD is a single-stage, low-power BJT NPN transistor, with a wide range of applications. It has been used in many consumer and industrial products and is one of the most widely used transistors in the world.
The KSE182PWD is ideal for use as a small-signal amplifier, switch, or general-purpose amplifier. The transistor is capable of supplying output power of up to 500 milliwatts at a collector current of up to 500 mA. It can also be used as a voltage regulator and is capable of handling input voltages up to 30 V.
The KSE182PWD is designed to operate at low supply voltages, making it ideal for use in battery-powered applications. The transistor has an exceptionally low saturation voltage, allowing it to be used in very low current and voltage applications. Additionally, the KSE182PWD is designed to withstand up to a maximum of 10 V across the collector and emitter.
The working principle behind the KSE182PWD is relatively simple. The base–emitter junction of the transistor is forward biased when a small current is applied to the base terminal. This forward bias causes the base–emitter junction to become conductive and the collector current to flow. This collector current is then amplified and output at the collector terminal. Due to the design of the transistor, the output current is proportional to the input current, and thus it can be used to amplify the signal.
The KSE182PWD is a small form factor device, with a lead pitch of 200 mils and a power dissipation of 0.5 watts. It is made up of a number of components, including two transistors, two diodes and an inductor. The transistors are connected in an NPN configuration, and the two diodes form the protection diodes, which protect the transistors from overvoltage and overcurrent conditions. The inductor is used to separate the input and output stages.
The KSE182PWD is a versatile transistor, suitable for a wide range of applications. It can be used as an amplifier, switch, and voltage regulator. It is also suitable for use in low voltage and current applications, due to its low saturation voltage. Furthermore, it is a small form factor device, with a lead pitch of 200 mils and a power dissipation of 0.5 watts.
The specific data is subject to PDF, and the above content is for reference
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