KSE170S Allicdata Electronics
Allicdata Part #:

KSE170S-ND

Manufacturer Part#:

KSE170S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 3A TO-126
More Detail: Bipolar (BJT) Transistor PNP 40V 3A 50MHz 1.5W Thr...
DataSheet: KSE170S datasheetKSE170S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Power - Max: 1.5W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Description

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The KSE170S is a single bipolar junction transistor. Bipolar junction transistors (BJTs) are use typically in electronics device to amplify and turn a signal. Among many different types of transistors, BJTs are the second most commonly used type due to their ability to handle large currents and voltages, and the fact that they provide high output power and virtually no noise or distortion. The KSE170S is a general-purpose 500 mA BJT with good power dissipation, suitable for a variety of application fields.

The KSE170S operates using a single biasing (or operating) point. It uses a base-emitter voltage of 6 V, a collector-emitter voltage of 20 V, and a collector-emitter current of up to 500 mA. This makes the KSE170S suitable for the switching of low- to medium-power applications, such as small to medium power supplies and digital circuits.

The KSE170S operates using a two-terminal junction between the base and the emitter of the transistor. When a small amount of current is applied to the base, the transistor\'s collector-emitter junction is increased, allowing an increased flow of current through the collector. This increased current flow then starts to activate the circuit and allow additional current to be amplified. This amplification process makes the KSE170S an ideal choice for amplifying audio signals.

The KSE170S can also be used in switching applications, such as relays, indicators, and lights. When the transistor is activated with a small amount of current, the faster switching time allows for more reliable circuit operation. The KSE170S has a gain of 420, making it suitable for switching applications which require fast response time.

The KSE170S can also be used in sensing applications. With its high current gain, the KSE170S can detect small changes in voltage or current and can be used as a sensor in a wide range of applications. It is also capable of operating at high frequencies, allowing it to be considered as a viable alternative to traditional sensing mechanisms.

The advantage of the KSE170S is its low cost and ease of use. The KSE170S is not only inexpensive, it also requires only a few components to achieve operation, making it a suitable choice for many different applications. This makes the KSE170S ideal for the consumer market, where the cost of components is a major consideration in the design process.

In conclusion, the KSE170S is a low-cost, general-purpose 500 mA bipolar junction transistor. With its single biasing point and low components count, it offers full control over the process which makes it suitable for various applications. Furthermore, its high current gain and fast response time makes it an ideal choice for audio amplification and switching applications. The KSE170S is also suitable for use in sensing applications, allowing it to act as a reliable and efficient sensor in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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