
Allicdata Part #: | KSE13003TH2ATU-ND |
Manufacturer Part#: |
KSE13003TH2ATU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 1.5A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Th... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 500mA, 1.5A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 14 @ 500mA, 2V |
Power - Max: | 20W |
Frequency - Transition: | 4MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | KSE13003 |
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The KSE13003TH2ATU, also known as an NPN silicon transistor, is a single-stage device with a wide range of application fields and uses. It is a general-purpose low-noise transistor that has an attractive cost-performance ratio, suitable for a variety of electronic equipment including transmitter and receiver circuits, amplification circuits, audio signal manipulation, motor control, and various other analog circuits. In terms of its physical dimensions, the transistor has a total case height of 1.2 mm and a total package width of 0.8 mm.
The KSE13003TH2ATU transistor has an operating temperature range of between -55°C and +150°C and is capable of handling power dissipation up to 500 mW at an ambient temperature of 25°C. It also has a maximum safe operating junction temperature of 175°C. A single transistor can be used in a variety of application fields, from a variety of high-current and high-voltage applications to low-current and low-voltage applications.
The KSE13003TH2ATU transistor operates using the same principle as other transistors, albeit using a much more efficient manner. It consists of three main components: the collector, the base and the emitter, each with its own purpose. The collector is the output of the transistor, which is the part that collects the electrons from the input. The base is the control element, which is used to regulate the flow of electrons from the input to the output. Finally, the emitter is the input of the transistor, which is the part that supplies electrons to the collector.
When an electric current is applied to the base, it switches on the NPN transistor and allows the current to flow through the collector. This causes electrons to be discharged from the emitter, which then flows through the collector, thus generating an output current. This process is known as minority carrier injection. The whole process is reversible, with the NPN transistor capable of switching the current back off when no current is applied to the base.
The KSE13003TH2ATU transistor is an important component for a variety of industrial, commercial and military applications. It is used for amplifying high-current and high-voltage signals and is also used in RF transistors for detecting transmission signals, amplifying the received signal and providing protection for the receiver circuit. It can also be used in motor control, where the NPN transistor can be used to quickly switch on or off large electrical motors. The transistor can be used in audio circuits, helping to amplify and distort audio signals in order to create unique sounds.
In conclusion, the KSE13003TH2ATU is a versatile single-stage low-noise transistor with a wide range of application fields. It operates using the same principle as other transistors, albeit with improved efficiency. It is capable of handling power dissipation up to 500 mW at an ambient temperature of 25°C and has an operating temperature range of between -55°C and +150°C. It is an important component in many commercial, industrial and military applications, where it can be used to amplify high-current and high-voltage signals, among other things.
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