KSE13003H2AS Allicdata Electronics
Allicdata Part #:

KSE13003H2AS-ND

Manufacturer Part#:

KSE13003H2AS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 1.5A TO-126
More Detail: Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Th...
DataSheet: KSE13003H2AS datasheetKSE13003H2AS Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
Power - Max: 20W
Frequency - Transition: 4MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Base Part Number: KSE13003
Description

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The KSE13003H2AS is a single-transistor bipolar junction transistor (BJT) device. It is a three-terminal semiconductor device with the source, gate, and drain electrodes connected to the collector, base, and emitter electrodes respectively. It works by allowing current to flow through the source-gate and source-drain junctions when current is applied to the base terminal. This transistor has its base terminal connected to the base current current, and has its collector connected to the drain current.

The KSE13003H2AS is generally used as an amplifier, as it can transmit a small input signal to a large output signal, or as a switch. As an amplifier, the KSE13003H2AS amplifies the input voltage signal and transmits it across the collector and emitter junction, which results in an increased output voltage. This makes it ideal for audio amplifiers. As a switch, the KSE13003H2AS device can switch on or off large amounts of current, which makes it useful in a variety of applications such as switching of output stages in power amplifiers or voltage regulators in power management systems.

The working principle of the KSE13003H2AS is based on the BJT\'s three-terminal structure. This device amplifies a current signal, which is applied to the input terminal (base), and then this current is amplified and transmitted to the output terminal (collector). This transistor works on the principle of “electron transport”. That is, when a current is applied to the base terminals, the electrons in the BJT are driven from the base to the collector. As these electrons flow from the base to the collector, a potential difference (voltage) is created between the collector and emitter. This voltage can be increased or decreased depending upon the amount of current applied to the base terminals.

The KSE13003H2AS is generally used in audio, power, and telecommunications applications. In audio applications, it can be used as an amplifier, mixer, or preamp. It is also commonly used in power amplifiers, voltage regulators, and PLCs. In telecommunications, it is used in a variety of applications such as telephone systems, DSL modems, and satellite receivers.

In conclusion, the KSE13003H2AS is a single-transistor bipolar junction transistor that utilizes the “electron transport” principle for amplification and switching. It is generally used in audio, power, and telecommunications applications. It is typically used as an amplifier, mixer, preamp, voltage regulator, and for power and telecommunications applications such as telephone systems, DSL modems, and satellite receivers.

The specific data is subject to PDF, and the above content is for reference

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