Allicdata Part #: | KSE170STU-ND |
Manufacturer Part#: |
KSE170STU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 3A TO-126 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 3A 50MHz 1.5W Thr... |
DataSheet: | KSE170STU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.7V @ 600mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 100mA, 1V |
Power - Max: | 1.5W |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126-3 |
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The KSE170STU is a single NPN bipolar junction transistor (BJT) that is especially suited for use as a switch and amplifier. It is commonly used in audio, power, and communications applications, as well as other applications requiring low noise, high efficiency switching and amplification. The transistor features a maximum Pd of 120W, a maximum collector-emitter voltage of 65V, and a maximum current gain of 300mA.
The KSE170STU is a current-controlled device, meaning that an increase in the distribution of electrons will cause a decrease in the current flow through the device, as opposed to a voltage-controlled device which would see an increase in current flow when the voltage is increased. The current flow through the KSE170STU is determined by the relationship between the base voltage and the collector-emitter voltage, which is regulated by the collector current. The gain in the current flow through the transistor is determined by the collector current, which is regulated by the base current.
The KSE170STU can be used as either a switch or an amplifier. When used as a switch, it allows current to flow through the collector-emitter junction when the base current is greater than the collector current. When used as an amplifier, the collector current is regulated by the base current, resulting in an amplified voltage or current. In both cases, the gain of the device is determined by the ratio of the base current to the collector current.
The typical power dissipation of the KSE170STU is around 120W, with a maximum forward current of 500mA. The collector-emitter voltage is rated at a maximum of 65V, and the maximum current gain of the device is 300mA. The operating temperature range of the transistor is -40°C to +85°C.
The KSE170STU is suitable for applications requiring low noise, high efficiency switching and amplification. It is commonly used in audio, power, and communications applications where large amounts of current flow are required, such as in switching power supplies, motor controllers, and inverters. The device is also suitable for use in analog circuits, such as amplifiers and oscillators, as well as digital circuits requiring high speed switching, such as logic gates.
The KSE170STU is a reliable and cost effective solution for applications requiring low noise, high efficiency switching and amplification. The device offers excellent performance, with a wide operating temperature range, a high maximum current gain, and a low maximum collector-emitter voltage. It is capable of withstanding high power levels, and is suitable for a variety of applications requiring low noise and high efficiency switching and amplification.
The specific data is subject to PDF, and the above content is for reference
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