KSP24BU Allicdata Electronics
Allicdata Part #:

KSP24BU-ND

Manufacturer Part#:

KSP24BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 620MHz 350m...
DataSheet: KSP24BU datasheetKSP24BU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V
Power - Max: 350mW
Frequency - Transition: 620MHz
Operating Temperature: 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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KSP24BU transistors are an energy-saving range of bipolar junction transistors designed for a wide variety of applications. The KSP24BU is used in circuits such as an audio pre-amplifier and video amplifier stages, as well as power output stages.

The KSP24BU is a three-terminal, NPN silicon (Si) power transistor. It is designed primarily for use in RF and audio amplification stages and has a high current gain with low saturation voltage. The KSP24BU has a power rating of 24Watt, a maximum collector-emitter (C-E) voltage of 800V, and a maximum collector-base (C-B) voltage of 1000V.

The KSP24BU has a wide range of uses in electronics and communication applications, such as in power amplifier circuits, audio and video processing systems, small radios, audio and video equipment, motor controllers, and many other applications. In addition, it is used in power supplies, amplifiers, subwoofer systems, and in many other applications.

The KSP24BU has a high current gain and low saturation voltage. Its maximum collector-emitter voltage is 800V, and its maximum collector-base voltage is 1000V. The KSP24BU is a robust, thermally stable device that is suitable for high-power applications. It is also a good choice for RF and audio amplifier circuits.

The working principle of the KSP24BU is based on the flow of electrons between the collector and the base of the transistor. When current from the base reaches the collector, a Coulomb field is created which causes electron-hole pairs to form. This in turn creates a current flow from the collector to the base. As the current from the base increases, the collector current increases, and the voltage across the collector and the base decreases.

The KSP24BU is a reliable device and has a high current gain and low saturation voltage. It is also less susceptible to temperature variations and offers high reliability in power supply and amplifier circuits. The KSP24BU is a highly integrated device, and its versatile design makes it suitable for a variety of applications in electronics and communication.

KSP24BU transistors, then, offer an energy-saving and efficient solution for a wide variety of applications. With their high current gain, low saturation voltage, and reliable performance, they are an ideal choice for RF and audio amplification stages, power supply and amplifier circuits, subwoofer systems, and many other applications. They are also an ideal choice for motor controllers, audio and video processing systems, small radios, and many other applications.

The specific data is subject to PDF, and the above content is for reference

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