KSP2907ABU

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	625mW
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	KSP2907A

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The KSP2907ABU is a high-performance, low-power transistors developed by INVECOM Microelectronics, and is classified as Single Bipolar Junction Transistors (BJT). It is designed for use in a wide range of applications, including amplifiers, oscillators, power management, signal conditioning, and switching circuits. The transistor is made up of a single, monolithic silicon NPN transistor with an active collector-base junction and a lightly doped, lightly coupled base-emitter junction. The device combines the classic NPN transistor structure and the amplifier circuit topology of a field-effect transistor (FET) in order to provide superior performance from a single device. The KSP2907ABU is suitable for high-power applications, such as audio power amplifiers and motor control circuits, and also for medium-power applications requiring fast switching speeds, such as data converters and RF amplifiers. The KSP2907ABU is available in a variety of packages including a surface mount package. The device features a low collector-emitter saturation voltage (VCEsat) of 1.2V and a fast switching speed of 1.5kV/µs, which allows the device to operate at higher frequencies. The KSP2907ABU is designed to operate with a wide range of power supplies, ranging from 4V to 80V, making it suitable for both low-voltage and high-voltage applications. The KSP2907ABU is designed with two features designed to ensure reliable operation and long lifetime operation. The first is its low-current, reverse-biased diode protection, which prevents the transistor from being damaged if the base current is reversed. The second is its reverse-leakage protection, which prevents the device from triggering if the base current is reverse biased. In addition, the device is designed for high-temperature operation, with a maximum VCESAT of 2V at 175°C. The KSP2907ABU is used in a variety of applications, including power management for industrial and automotive applications, audio amplifiers, DC-DC converters, and switching circuits. It is also used in medical equipment, such as pacemakers and defibrillators, as well as other high-reliability applications. The working principle of the KSP2907ABU is based on its ability to control the amount of current flowing through the collector-base junction. This is achieved by controlling the base current, which in turn controls the amount of current flowing into the collector-base junction. When the base current is kept low, the transistor operates in its saturation region and the collector current is low. When the base current is increased, the transistor operates in its active region and the collector current is increased. The transistor is therefore able to control the amount of current being supplied to the load, allowing it to either amplify or switch signals. The KSP2907ABU is an ideal choice for a variety of power management, signal conditioning, and switching applications. Its low-power, high-speed characteristics make it an excellent choice for applications requiring fast switching and high power-handling capability. Its low collector-emitter saturation voltage and low reverse-leakage protection make it suitable for high-temperature, high-reliability applications. In addition, its wide range of power supplies and its available packages make it a versatile and cost-effective solution for a variety of applications.

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