KSP27TA Allicdata Electronics
Allicdata Part #:

KSP27TA-ND

Manufacturer Part#:

KSP27TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 60V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN - Darlington 60V 500m...
DataSheet: KSP27TA datasheetKSP27TA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Description

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KSP27TA is a silicon NPN epitaxial planer transistor with high collector-emitter breakdown voltage. It is a small signal transistor, specially developed for general use as a low cost miniature transistor in many consumer electronics applications. Phototransistor, unijunction transistor and triode applications are also possible. It is suitable for use in high frequency amplifier circuits and switching circuits. The KSP27TA can also be used in push-pull circuits, high-current drivers, relay drivers and other switching devices.

The KSP27TA is a three-terminal device that is constructed of a single silicon piece with a rectangular planar structure. It features a PN junction between the base and collector layers. A single junction exists between the base and the emitter layer. There is also a gate layer between the two terminals. The gate layer is made of a silicon nitride layer that acts as a layer of insulation between the base and emitter.

The working principle of the KSP27TA is that when a small current flows through the base-emitter junction, some of the current flows through the collector-base junction and the collector current is much larger than the base current. This phenomenon is called the Early effect or "transistor effect" and it is what makes the KSP27TA suitable for many applications.

The KSP27TA can be used in various electronics applications such as audio amplifiers, digital logic components, switching circuits, high-current drivers, oscillators and frequency dividers. It can be used in high-frequency amplifier circuits to amplify signals up to 50MHz, and switching circuits for switching signals up to several kilohertz. The KSP27TA can also be used in voltage regulation and current regulation circuits.

The KSP27TA can operate at frequencies up to 200MHz and can handle an input current up to 10mA. The power dissipation of the device is 1 watt and it is capable of providing a wide range of collector-emitter voltage. The maximum operating temperature is 125°C.

The KSP27TA is a cost-effective solution for many application fields due to its high voltage and frequency performance. It is also very reliable and durable due to its planar structure. Additionally, the KSP27TA has a low cost and long shelf life, making it an ideal choice for many applications and designs.

The specific data is subject to PDF, and the above content is for reference

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