
Allicdata Part #: | KSP25TA-ND |
Manufacturer Part#: |
KSP25TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 40V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 40V 500m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10000 @ 100mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Description
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KSP25TA is a kind of Bipolar Junction Transistor (BJT) which has a single configuration of three terminals. It is mainly used in signal amplification, automatic gain control, and switching applications in aircraft radio, telecommunications, and medical equipment. KSP25TA works by allowing electricity to flow in one direction, called the emitter-base (EB) junction, while providing an electrical barrier to backward flow, called the collector-base (CB) junction.
Structure of KSP25TA
KSP25TA is composed of two main components: an emitter, which is a layer of extremely lightly doped n-type semiconductor material, and a base (or collector in some configurations) layers, which is a layer of heavily doped p-type semiconductor material. On top of the base, there is a thin layer of lightly doped p-type material, and between the emitter and the collector there is an intrinsic semiconductor layer, which is lightly doped on both sides. This layer is known as the “middle layer”.The topmost layer of the transistor is the emitter. It is connected to the base through a properly doped contact layer and works by emitting electrons through thermionic emission. This helps establish the EB junction. The base layer is connected to the collector, and responsible for transferring the electrons from the emitter to the collector. The electrons then pass through the intrinsic layer and enter the collector, forming the CB junction.Working Principle of KSP25TA
The working principle of the KSP25TA is based on the principle of “holes”, which are the spaces left by electrons in the semiconductor material when they are removed from the material. When a voltage is applied to the EB junction, the electrons from the emitter are attracted to the base and enter the holes in the base material. This creates an electrical field in the intrinsic layer, which causes the electrons to move towards the collector. The magnitude of the voltage on the EB junction determines the amount of current that flows through the transistor. The greater the applied voltage, the more emitter current is allowed to flow. The current flow across the collector-base junction is known as the “collector current” and is approximately proportional to the emitter current. This current can be used to control the collector-gate voltage, allowing the transistor to operate as a switch.Applications of KSP25TA
KSP25TA is widely used in a range of applications including:- Aircraft radio systems;
- Telecommunications equipment;
- Medical equipment;
- Signal amplifiers;
- Automatic gain control circuits;
- High power switching circuits;
- Intercommunication systems;
- Industrial process control systems;
- Power inverters; and
- Robotic control systems.
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