
Allicdata Part #: | KSP24TA-ND |
Manufacturer Part#: |
KSP24TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 100mA 620MHz 350m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 8mA, 10V |
Power - Max: | 350mW |
Frequency - Transition: | 620MHz |
Operating Temperature: | 135°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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KSP24TA is a single bipolar junction transistor (BJT) that can be used in many applications. It is a low-power, low-frequency, silicon bipolar RF power transistor with an integrated emitter ballasting resistor. This device is ideal for use in communications systems, such as wireless local area networks (WLANs) and wireless personal area networks (WPANs), that require low-level radio-frequency signals.
The KSP24TA uses a JFET-type embedded resistor between the base and emitter in order to reduce the effect of thermal runaway, which can cause the transistor to self-destruct due to excessive current. This resistor also reduces the noise produced during operation, making the KSP24TA better suited for use in amplifiers and other communication applications.
The operation of the KSP24TA is based on two principles: electron flow and voltage amplification. Electron flow is a process in which electrons move from the electron-rich area, or emitter, to the electron-poor area, or base. This process causes a current to flow, which is then amplified by the voltage applied to the base.
When a voltage is applied to the base, the electrons present in the emitter are attracted towards it and then flow into the base. The electrons in the base are then further attracted towards the collector and flow towards it, creating a current. The current is then amplified by the voltage applied to the base, producing a larger current.
The KSP24TA transistor can be used in many applications, such as amplifiers, oscillators, and switches. In amplifiers, the KSP24TA is used as a small-signal transistor, and its current gain can be adjustable. The KSP24TA also provides good input-output isolation, which makes it suitable for use in oscillators, transceivers, and other high-frequency applications.
The KSP24TA is a low-power, low-frequency transistor that can be used for many applications. It has an integrated emitter ballasting resistor that reduces thermal runaway and noise, and its operation is based on electron flow and voltage amplification. It can be used as a small-signal transistor in amplifiers, oscillators, and switches, and can also provide good input-output isolation.
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