
Allicdata Part #: | KSP25BU-ND |
Manufacturer Part#: |
KSP25BU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 40V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 40V 500m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10000 @ 100mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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Transistors - Bipolar (BJT) - Single
The KSP25BU transistor is a high-performance and multifunctional bipolar transistor with superior performance and reliability, suitable for high-speed circuit switching and amplifier applications. With its low power consumption and wide operating temperature range, it’s an excellent choice for modern electronics.
Application field
The KSP25BU is a medium-gain bipolar NPN Darlington transistor, which can be used in consumer electronics, instrumentation, RF amplifiers, oscillators and digital circuits. It provides high-frequency performance such as wide band gap and low noise figure. The Darlington configuration provides superior gain and lower output resistance than a single transistor. In addition, its wide operating temperature range enables it to meet the needs of many application scenarios.
Working principle
The KSP25BU utilizes a NPN Darlington configuration when operating. The two collector-emitter terminals of the two transistors form two separate elements connected in series. When the base voltage increases the current through one of the two transistors, the other transistor also starts to conduct since its base potential has a direct connection to the collector of the first transistor. As a result, the gain of the two transistors is combined and the output current is equal to the sum of the two transistors’ gain.
The KSP25BU also possesses a low noise figure, thanks to its optimized construction and material selection. The low noise figure allows it to be used in noise-sensitive devices such as RF receivers, while its wide operating temperature range and high frequency capabilities make it an ideal fit for many applications.
In addition, its high maximum gain and low collector-emitter saturation voltage also make it suited for pulse-width-modulated applications as well as general purpose transistor applications.
Conclusion
The KSP25BU is an excellent choice for high-performance, high-reliability applications with wide temperature range, low noise figure and high gain capability. This advanced bipolar transistor is suitable for consumer electronics, instrumentation and RF applications and provides excellent high-speed performance, thanks to its Darlington configuration.
The specific data is subject to PDF, and the above content is for reference
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