KSP26BU Allicdata Electronics
Allicdata Part #:

KSP26BU-ND

Manufacturer Part#:

KSP26BU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 50V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN - Darlington 50V 500m...
DataSheet: KSP26BU datasheetKSP26BU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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Bipolar junction transistors (BJT), including the KSP26BU model, are three-terminal devices that can be used to amplify current or act as a switch. BJTs are made with two p-n junctions, which separate two electrically-conductive layers of material. The three terminals of a BJT consist of a collector, base and emitter, and are usually labeled C, B and E respectively. They are current-controlled devices, meaning the current flowing through the base controls the current that flows through the collector-emitter circuit.

The KSP26BU device is a high-performance NPN transistor developed for use as an amplifier, driver and switch in electronic devices. With a maximum current gain of 200, the KSP26BU transistor is ideal for signal transfer applications. The transistor can provide the necessary current amplification and switching needed by signal pre-amplifier, amplifier and low-frequency power amplifier stages. It also provides efficient operation in audio frequency applications, such as sound cards and radio receivers.

The KSP26BU bipolar junction transistor is a current-controlled device with two p-n junctions. When a small current is passed through the base, the larger current is allowed to flow through the collector-emitter circuit. This current amplification is controlled using the transistor\'s voltage gain. The voltage gain of the KSP26BU transistor is 100, which means the voltage drop across the collector-emitter circuit is 100 times greater than the voltage drop across the base-emitter circuit.

The working principle of the KSP26BU device involves current and voltage amplification that allows it to act as an amplifier or switch. When a small current flows through the transistor\'s base, it controls the larger current flow through the collector-emitter circuit. This is known as current gain, and is controlled by the voltage gain of the transistor. The voltage gain is a measure of the amplification of the voltage across the collector-emitter circuit. The KSP26BU transistor has a voltage gain of 100, which gives it the ability to amplify the voltage signals from small pre-amplifier stages or to act as an efficient switch for audio frequencies.

The KSP26BU transistor is a high-performance device designed for a variety of applications. Its current and voltage gain capabilities make it an ideal device for signal transfer applications, as well as acting as a driver or switch in audio frequency applications such as sound cards and radio receivers. The KSP26BU transistor is an economical, efficient and reliable component, making it a popular choice for many electronics professionals.

The specific data is subject to PDF, and the above content is for reference

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