
Allicdata Part #: | KSP26BU-ND |
Manufacturer Part#: |
KSP26BU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 50V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 50V 500m... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10000 @ 100mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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Bipolar junction transistors (BJT), including the KSP26BU model, are three-terminal devices that can be used to amplify current or act as a switch. BJTs are made with two p-n junctions, which separate two electrically-conductive layers of material. The three terminals of a BJT consist of a collector, base and emitter, and are usually labeled C, B and E respectively. They are current-controlled devices, meaning the current flowing through the base controls the current that flows through the collector-emitter circuit.
The KSP26BU device is a high-performance NPN transistor developed for use as an amplifier, driver and switch in electronic devices. With a maximum current gain of 200, the KSP26BU transistor is ideal for signal transfer applications. The transistor can provide the necessary current amplification and switching needed by signal pre-amplifier, amplifier and low-frequency power amplifier stages. It also provides efficient operation in audio frequency applications, such as sound cards and radio receivers.
The KSP26BU bipolar junction transistor is a current-controlled device with two p-n junctions. When a small current is passed through the base, the larger current is allowed to flow through the collector-emitter circuit. This current amplification is controlled using the transistor\'s voltage gain. The voltage gain of the KSP26BU transistor is 100, which means the voltage drop across the collector-emitter circuit is 100 times greater than the voltage drop across the base-emitter circuit.
The working principle of the KSP26BU device involves current and voltage amplification that allows it to act as an amplifier or switch. When a small current flows through the transistor\'s base, it controls the larger current flow through the collector-emitter circuit. This is known as current gain, and is controlled by the voltage gain of the transistor. The voltage gain is a measure of the amplification of the voltage across the collector-emitter circuit. The KSP26BU transistor has a voltage gain of 100, which gives it the ability to amplify the voltage signals from small pre-amplifier stages or to act as an efficient switch for audio frequencies.
The KSP26BU transistor is a high-performance device designed for a variety of applications. Its current and voltage gain capabilities make it an ideal device for signal transfer applications, as well as acting as a driver or switch in audio frequency applications such as sound cards and radio receivers. The KSP26BU transistor is an economical, efficient and reliable component, making it a popular choice for many electronics professionals.
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