LCE13

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LCE13 Application Field and Working Principle

The LCE13 is an avalanche breakdown diode, also known as a transient-voltage-suppression diode. It is designed to protect electrical components from high voltages and reverse voltage breakdowns. The LCE13 is designed with an integrated zener diode for transient protection and its dielectric ruggedness is superior to previous avalanche breakdown diode designs. It is designed to protect electronic devices from voltage extremes, power overshoot, and overvoltage transients, including impulses, surge, and ESD.

The LCE13 is designed for a wide range of applications where transient, overvoltage protection is needed. It can be used in automotive, telecommunications, medical, military, industrial, or computer systems. The LCE13 diode is designed to provide reverse bias protection for 3000 Watts overvoltage protection and sensing applications. It is also suitable for a wide range of environments, including dry (73% stability), damp (85% stability), and humidity (83% stability). It is designed to protect components from overvoltages and power surges, even in extreme conditions.

The LCE13’s working principle is based on an avalanche breakdown mechanism. When the reverse bias at the p-n junction reaches a certain value, an avalanche or electron multiplication process begins. This process causes the current to increase exponentially with increasing voltage. This allows the device to limit the current flow and suppress the voltage up to a maximum level. It then safely passes the current back into the system.

The LCE13 has a low clamping voltage of 11 volts, and a maximum clamping current of 6 Amperes. Its peak pulse power dissipated is 3000 Watts, and the total capacitance is 0.5 pF. The device is RoHS compliant. The peak surge current is 5200 A, and hot-swapping capability is 8 Amperes.

Overall, the LCE13 is an avalanche breakdown diode designed to protect electrical components from overvoltage and overcurrent. It is a rugged diode with a range of features, such as low clamping voltage, high peak pulse power, and a low on-state resistance. It is suitable for a wide range of applications, including automotive, telecommunications, medical, and military. With its avalanche breakdown mechanism, the diode can offer protection against overvoltage or power surges in extreme conditions.

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