LH28F160S3HNS-L10 Allicdata Electronics
Allicdata Part #:

425-1842-ND

Manufacturer Part#:

LH28F160S3HNS-L10

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Sharp Microelectronics
Short Description: IC FLASH 16M PARALLEL 56SSOP
More Detail: FLASH Memory IC 16Mb (2M x 8, 1M x 16) Parallel 1...
DataSheet: LH28F160S3HNS-L10 datasheetLH28F160S3HNS-L10 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8, 1M x 16)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-SOP (0.524", 13.30mm Width)
Supplier Device Package: 56-SSOP
Description

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The LH28F160S3HNS-L10 is a type of memory device that stores digital data for memory and data processing applications. It is a high density, high speed flash memory device which can be used in a variety of applications.

The LH28F160S3HNS-L10 is a 16 megabit (2 megabytes) flash memory device that uses a common 0.3 micrometer CMOS process. It is designed with 2Kword addressing architecture and can be operated as 8, 16, 32, 64 or 128 word page sizes. It features an 8 bit data bus, 8 address lines and a single chip select. The LH28F160S3HNS-L10 offers the best performance and value when used in a variety of memory and data processing applications.

The LH28F160S3HNS-L10 has a 16 megabyte density that supports a variety of applications including medical and imaging system, consumer electronics, embedded microcontrollers, high speed systems, intelligent system, and code management. It is available in a variety of packages including 5V only, 5V/3V and 3V only. The LH28F160S3HNS-L10 is a cost-effective flexible solution for any application where storage density and speed are two of the most important criteria.

It is designed to provide an easy integration with microcontrollers and systems based on the 68020 architecture because it supports the 256Kword boundary boundary feature. The LH28F160S3HNS-L10 also supports auto-access technology which allows it to directly access random data from its memory array in less than 10 nanoseconds. This eliminates the need for address decoding and significantly reduces the read time.

The LH28F160S3HNS-L10 is well suited for applications that require powerful read times and fast erase time. It features an erase time of less than 1 millisecond and a read time of less than 10 nanoseconds. The LH28F160S3HNS-L10 also has a low power consumption of 35mA at 3 volts. This helps to keep overall system power consumption down and helps save energy.

The LH28F160S3HNS-L10 is built to meet the most stringent standards of electrical, mechanical and optical reliability. It is RoHS compliant and is backed by a manufacturer’s warranty of five years.

The LH28F160S3HNS-L10 offers a versatile design and wide range of features that make it an ideal choice for a number of applications. Its features make it an exceptional choice for any application that requires a reliable and cost-effective memory device. It is a highly cost-effective memory solution that offers high speed and reliability.

The specific data is subject to PDF, and the above content is for reference

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