LH28F160S5HNS-L70 Allicdata Electronics
Allicdata Part #:

425-1843-ND

Manufacturer Part#:

LH28F160S5HNS-L70

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Sharp Microelectronics
Short Description: IC FLASH 16M PARALLEL 56SSOP
More Detail: FLASH Memory IC 16Mb (2M x 8, 1M x 16) Parallel 7...
DataSheet: LH28F160S5HNS-L70 datasheetLH28F160S5HNS-L70 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8, 1M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-SOP (0.524", 13.30mm Width)
Supplier Device Package: 56-SSOP
Description

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The LH28F160S5HNS-L70 is a memory solution that is often used for embedded applications. This memory is a single-transistor (SOT) package that is designed for applications requiring large capacities of data storage. It is also capable of withstanding temperature extremes and can be used in hostile environments.

The LH28F160S5HNS-L70 is a non-volatile memory (NVM) which offers a low power consumption with fast read and write times. It offers a higher performance than those found in conventional non-volatile memories. Its operations are based on a significant number of transistors, capacitors and switches.

The LH28F160S5HNS-L70 is used in a variety of applications such as embedded systems, automotive electronics, handheld products, industrial autmation, and medical electronics. It is also suitable for developing certain space applications due its durability; such as satellites, missiles, and military applications.

The working principle of the LH28F160S5HNS-L70 is based on the storage of data using a capacitor. The capacitor holds a charge which is transferred between the source and the drain. When the capacitor is empty, the state is “off”, and when it is charged, the state is “on”. This is a very reliable form of memory because the data stored is not lost if power is lost.

The LH28F160S5HNS-L70 also uses an array of floating gates to store multiple bits of information simultaneously. The substrate between these gates can be used to prevent data from leaking. This is known as the “floating gate” memory. The memory technology employed in the LH28F160S5HNS-L70 is read-only memory (ROM). This form of memory is great for applications involving data storage and retrieval because it cannot be inadvertently changed or corrupted.

The LH28F160S5HNS-L70 is a versatile memory solution and can be used in a wide variety of applications. Its low power consumption makes it suitable for portable and battery operated devices, and its reliable storage technology makes it suitable for long-term data storage applications. Furthermore, its resistance to temperature extremes makes it suitable for environments that experience extreme temperatures.

The specific data is subject to PDF, and the above content is for reference

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