LH28F160S3HT-TF

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Introduction to LH28F160S3HT-TF Memory

The LH28F160S3HT-TF memory is a type of non-volatile, electrically erasable programmable read-only memory (EEPROM) designed by Sharp. It is a 16Mbit memory device that is compliant with the JEDEC standard 4Hi-Vfl ECC (Error Correction Code) flash technology. The LH28F160S3HT-TF provides superior erase messaging control and high density storage, and is ideal for applications such as consumer electronics, aerospace, defense systems, automotive telematics, etc.

Application Field of LH28F160S3HT-TF Memory

The LH28F160S3HT-TF memory is used in a wide range of applications, including consumer electronics, aerospace, automotive telematics, and defense systems. In consumer electronics, it is used for storing data so it can be retrieved at a later time. It is also used in mobile devices and PDAs to store data. In the aerospace and defense industries, the LH28F160S3HT-TF is used to store mission-critical data that must be reliably stored and quickly accessed. Automotive telematics rely on the LH28F160S3HT-TF to store navigation data and for vehicle diagnostics.

Working Principle of LH28F160S3HT-TF Memory

The LH28F160S3HT-TF memory device is powered by EEPROM technology, which uses Fowler-Nordheim tunneling to change the threshold voltage of the floating gate transistors. This allows the information stored on the floating gate to be erased and written in order to store new information. The device supports two levels of cell structure: the memory cell structure, and the Error Correction Code (ECC) ring structure. The memory cell structure consists of transistors with a control gate, a floating gate, and a drain terminal. The ECC ring structure is used to provide error correction, ensuring that data stored in the device is kept safe and reliable.

When the LH28F160S3HT-TF is used to store data, it first goes through a process of encoding, where a set of codes are used to represent the data in order to minimize errors. Once the data is encoded, it is then written to the memory cells. The device also features advanced erase messaging control, which allows it to erase blocks of data in a single operation. This helps ensure that data stored in the device is consistent and up-to-date.

Conclusion

The LH28F160S3HT-TF memory device is a non-volatile, electrically erasable programmable read-only memory (EEPROM) designed by Sharp. It is used for many different applications, such as consumer electronics, aerospace, defense systems, and automotive telematics. The LH28F160S3HT-TF works using EEPROM technology, which relies on Fowler-Nordheim tunneling to change the threshold voltage of the floating gate transistors. The device also features advanced erase messaging control and error correction codes, which reduce the risk of data corruption or data loss.

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