LH28F160S3HT-L10A

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Memory has steadily been evolving over the years, getting increasingly more powerful and reliable. LH28F160S3HT-L10A is one of the more advanced solutions in the field, measuring in at 16Mb (2MB). With its advanced set of features, coupled with its robust architecture, LH28F160S3HT-L10A provides a great choice for applications that demand high bandwidth, reliable data storage, as well as low power consumption.

The LH28F160S3HT-L10A is composed of a 512Kx32 (16MB) FIFO page mode Flash Memory. It has a 4-bank architecture, allowing for higher memory densities and faster read times. Each bank is capable of accessing individual data fields with 0 wait states and 16-bit data transfers. The FIFO-paging approach is designed to offer better overall performance than traditional page-based Flash Memories. In addition, the LH28F160S3HT-L10A utilizes an Advanced Low Voltage Read technology to minimize standby current consumption. This feature makes the memory well-suited for battery-operated applications, such as in handheld electronics and cell phones.

The LH28F160S3HT-L10A is optimized for a wide variety of applications, including embedded storage, portable audio players, and other embedded applications that require low-power, high-performance Flash Memory. The variety of features and robust architecture also make it suitable for use in a wide range of applications, including MP3 players, digital cameras, PDAs, and other embedded and automotive applications. Additionally, the LH28F160S3HT-L10A can be used for in-circuit and in-board testing.

The key applications that can be programmed with the LH28F160S3HT-L10A include boot code, application program, system algorithms and data tables, power-on/off sequence data, and calibration data. In addition, it can be used to store audio and video data, as well as image and graphic data. The LH28F160S3HT-L10A also includes an intelligent “sector protection” feature which prevents users from inadvertently changing protected areas of Flash Memory data.

As far as the operating principle of the LH28F160S3HT-L10A is concerned, the memory uses a “Random-Page Read” technique. This technique enables faster data rates by increasing the number of bytes per page, by optimizing the page size for each data transfer. The Random-Page Read method also increases the overall data throughput by minimizing the wait states required for data transfers. Additionally, the built-in “insertion test” feature allows for high-speed testing of the memory without external equipment.

Overall, the LH28F160S3HT-L10A offers a great combination of features and robust architecture, making it suitable for a wide variety of applications. In addition to its low-power consumption and advanced data transfer techniques, its intelligent sector protection feature adds an additional layer of security, allowing users to protect certain areas of the memory. As such, the LH28F160S3HT-L10A is an ideal choice for many embedded and automotive applications.

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