LH28F160S5HNS-S1

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	16Mb (2M x 8, 1M x 16)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	56-SOP (0.524", 13.30mm Width)
Supplier Device Package:	56-SSOP

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Introduction to LH28F160S5HNS-S1

LH28F160S5HNS-S1 is a type of non-volatile flash memory. It has 16 Mbit of storage, making it one of the most popular types of flash memory available. It is mainly used in applications such as embedded systems, automotive, industrial, medical, security, and communications.

Applications of LH28F160S5HNS-S1

The LH28F160S5HNS-S1 can be used for a range of applications, such as storing code for ARM or PowerPC processors, as well as embedded applications. It is also suitable for data logging and data retention applications. The device also supports a wide operating range of -40ºC to +105ºC and can be used in a variety of system designs.In terms of storage capacity, the LH28F160S5HNS-S1 can store up to 16 megabytes of data in a single chip, making it one of the most popular types of flash memory available. The device is also equipped with an advanced Power Management Unit, which helps to reduce power consumption and prolong battery life.

Working Principle of LH28F160S5HNS-S1

The LH28F160S5HNS-S1 is a nonvolatile memory device, meaning that it does not require power for the stored data to remain stored. The device utilizes electron tunneling, which is a form of quantum tunneling that occurs at the nanometer scale, to store data. By utilizing tunneling, the device can store and retrieve data without the need for power.The device is composed of a number of memory cells, each of which is a microscopic tunneling junction. The tunnel junctions work by using a thin layer of material between two metal surfaces. When a voltage is applied to the tunnel junction, electrons can tunnel through the thin layer of material, thus storing data. When writing information to a memory cell, an electric current is used to force electrons into the tunnel junction, while a lower current voltage is used to draw the electrons out of the junction.

Benefits of LH28F160S5HNS-S1

Some of the advantages of using the LH28F160S5HNS-S1 include its capability to retain data even in the absence of power, low power consumption, and wide temperature range. It also has a longer operational lifespan than other types of flash memory, as it does not suffer from wear-out. It is also denser, making it ideal for applications that require a lot of data storage capabilities.

Conclusion

LH28F160S5HNS-S1 is a type of non-volatile flash memory that is used in a range of applications, including embedded systems, automotive, industrial, medical, security, and communications. It is one of the most popular types of flash memory available and can store up to 16 megabytes of data in a single chip. It uses electron tunneling to store and access data, and has a number of benefits including its capability to retain data even in the absence of power, low power consumption, wide temperature range, and longer operational lifespan.

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