LH28F320S3NS-L11 Allicdata Electronics
Allicdata Part #:

425-1844-ND

Manufacturer Part#:

LH28F320S3NS-L11

Price: $ 44.43
Product Category:

Integrated Circuits (ICs)

Manufacturer: Sharp Microelectronics
Short Description: IC FLASH 32M PARALLEL 56SSOP
More Detail: FLASH Memory IC 32Mb (4M x 8, 2M x 16) Parallel 9...
DataSheet: LH28F320S3NS-L11 datasheetLH28F320S3NS-L11 Datasheet/PDF
Quantity: 283
1 +: $ 40.38930
10 +: $ 36.35480
25 +: $ 35.56250
50 +: $ 34.81810
100 +: $ 30.47180
Stock 283Can Ship Immediately
$ 44.43
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-SOP (0.524", 13.30mm Width)
Supplier Device Package: 56-SSOP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The LH28F320S3NS-L11 is a memory device that serves a specific, important purpose. It’s a non-volatile memory, capable of holding data, even in the event of a power outage or other electrical disruption. Specifically, it’s a type of Flash Memory, which is known for it’s ruggedness and resistance to interference.

The specific application field of the LH28F320S3NS-L11 varies. It’s primarily used in cellular phones, digital cameras, and MP3 players. Many modern consumer electronics require some form of memory, and this is the type used by most devices. It’s also used in more complex electronic systems, such as computers, telecommunications equipment, and automotive systems.

How does the LH28F320S3NS-L11 memory device work? Unlike a RAM, which is volatile and will erase its contents after the power is cut, the LH28F320S3NS-L11 is a non-volatile Flash Memory. It uses a process called Electron Tunneling, which moves electrons through a thin oxide layer and into a floating gate. This trait is what makes Flash Memory so reliable; it can keep its data intact even if the device is powered off for a lengthy period of time.

When data is written to the LH28F320S3NS-L11, it’s done through a two step process. First, the electrons are programmed into the floating gate. After that, they’re stored on the NAND cells. The array of these NAND cells is organized in blocks. These blocks of cells can be individually erased and rewritten, allowing for maximum efficiency.

When data is read from the LH28F320S3NS-L11 memory device, it’s done in a similarly efficient manner. Read operations are performed on individual cells, allowing for fast access to data. The cells also contain error correction coding, which makes them resistant to physical shock and electrical interference.

All in all, the LH28F320S3NS-L11 is an ideal memory device for many applications. It’s capable of holding data stably, even in the event of a power outage. It’s also durable against shock and interference, making it perfect for consumer electronics or any application which requires reliable, long-term storage.

The specific data is subject to PDF, and the above content is for reference

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