LH28F320S3HNS-L11 Allicdata Electronics
Allicdata Part #:

425-1845-ND

Manufacturer Part#:

LH28F320S3HNS-L11

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Sharp Microelectronics
Short Description: IC FLASH 32M PARALLEL 56SSOP
More Detail: FLASH Memory IC 32Mb (4M x 8, 2M x 16) Parallel 1...
DataSheet: LH28F320S3HNS-L11 datasheetLH28F320S3HNS-L11 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-SOP (0.524", 13.30mm Width)
Supplier Device Package: 56-SSOP
Description

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LH28F320S3HNS-L11 is a kind of memory commonly used in digital circuit design and applications. It is a flash memory device that operates at higher speeds and provides large storage capacities with 3V power source. This device is especially useful for applications that require frequent updates such as automotive, industrial, and consumer electronics. The memory is also suitable for use in large-scale designs such as embedded systems, network switches, and telecom systems.

The memory device is built of 4, 4-Mbit sectors arranged in single- or dual-input multiplex circuits. Each sector contains a minimum of 128 KBytes of data storage space. The maximum capacity is 512 MBytes. It has the capability of erase and program operations which allow the device to be either read-only or write-enabled. The read/write speed is typically 200 nanoseconds per cell.

The LH28F320S3HNS-L11 utilizes advanced technologies such as dynamic random access memory (DRAM) and Multi-level Cell (MLC) technology to store data. DRAM provides near-instantaneous access to data while MLC allows up to 8 bits of data per cell. This improves the read/write speed of the device as well as its storage density. The Unique ID ensures that the data stored in the device is secure and is tamper-proof.

The LH28F320S3HNS-L11 device is also equipped with on-chip safety features that provide protection from power-failures, accidental erasures, and data corruption. The error correcting code (ECC) allows for the detection and correction of any data corruption that may occur due to unavoidable interference. It has power-fail protection circuitry to protect the memory contents from being lost in the event of sudden power-down.

The LH28F320S3HNS-L11 has a wide range of operating temperature range from 0°C to 70°C. It also has a superior endurance rating which can survive up to one million program/erase cycles. The device is equipped with an advanced programming system to allow fast and efficient data programming.

The LH28F320S3HNS-L11 is suitable for a variety of digital circuit design applications. It is suitable for use in automotive, industrial, consumer electronics, and embedded systems. It is ideal for applications that require frequent updates and large-scale designs. The device is designed to provide fast and efficient data programming.

The specific data is subject to PDF, and the above content is for reference

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