LH28F320S3HNS-ZM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The LH28F320S3HNS-ZM is an embossed chip developed by Fujitsu, a major manufacturer in the semiconductor market. It is part of the flash memory family and is used primarily in consumer electronics. As a single-level cell (SLC) NAND flash memory, it offers quick read and write speeds of up to 52 Mbits/s and 444 Mbits/s respectively, making it ideal for high-speed applications where data storage time is critical. It also has a low power consumption, allowing for a greater battery life on mobile devices.

The LH28F320S3HNS-ZM is a device designed to store large amounts of data in a small form factor. It is composed of a series of memory cells arranged in columns and rows, with each cell being a miniature transistor. As data is written to the device, the cells are turned on and off, which creates patterns of electrical charge in each cell. This is known as "programming," and the patterns produced by programming data into each cell determine how much data is stored in them. The entire system works in a similar fashion to a giant computer chip.

The main application field of LH28F320S3HNS-ZM is in consumer electronics. It can be found in digital cameras, music players, smartphones, tablets, and other devices. It is also used in industrial applications, as its low power consumption makes it ideal for devices that must be powered continuously, such as medical equipment. Its high speed and large storage capacity also allow it to be used in memory cards, embedded applications, and in the automotive industry.

The LH28F320S3HNS-ZM is based on a technology called NAND Flash, which is a type of non-volatile memory. This type of memory can be programmed and erased quickly, using standard electrical pulses. As the device does not lose its data even when the power is turned off, it is perfect for applications where data needs to be retained for long periods of time. NAND Flash also has a higher density than other types of memory, allowing for more data to be stored in a smaller area.

As the LH28F320S3HNS-ZM uses integrated circuits and is built on a MOS process, it is capable of leveraging an extremely low bit error rate (BER). BER, or bit error rate, is the number of errors present in a data stream compared to the total number of bits, and a high BER would indicate a degree of unreliability in the memory device. With a lower BER, the LH28F320S3HNS-ZM is more reliable, which is especially important in applications where data integrity is a must.

The LH28F320S3HNS-ZM is a powerful, high-performance flash memory device. With its fast read and write speeds, low power consumption and high storage capacity, it is perfect for a variety of applications in the consumer electronics, industrial, and automotive industries. Its low BER and affordable price point make it ideal for applications where reliability and cost effectiveness are a priority. From digital cameras to medical applications, the LH28F320S3HNS-ZM has the capabilities to meet any application’s needs.

The specific data is subject to PDF, and the above content is for reference