Allicdata Part #: | LM5112Q1SDX/NOPB-ND |
Manufacturer Part#: |
LM5112Q1SDX/NOPB |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET GATE DVR TINY 7A 6WSON |
More Detail: | Low-Side Gate Driver IC Inverting, Non-Inverting 6... |
DataSheet: | LM5112Q1SDX/NOPB Datasheet/PDF |
Quantity: | 1000 |
Logic Voltage - VIL, VIH: | 0.8V, 2.3V |
Base Part Number: | LM5112 |
Supplier Device Package: | 6-WSON (3x3) |
Package / Case: | 6-WDFN Exposed Pad |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Rise / Fall Time (Typ): | 14ns, 12ns |
Input Type: | Inverting, Non-Inverting |
Current - Peak Output (Source, Sink): | 3A, 7A |
Series: | -- |
Voltage - Supply: | 3.5 V ~ 14 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 1 |
Channel Type: | Single |
Driven Configuration: | Low-Side |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMIC - Gate Drivers refers to power management integrated circuits (PMICs) that include sets of signals for the control of various power switches and provide interface to maintain their safe operation. One such PMIC is the LM5112Q1SDX/NOPB, which is a high-performance gate driver for N-channel MOSFETs and IGBTs. It has low rDS(on) MOSFETs as well as fast switching IGBTs, providing an optimal solution for a variety of power switching applications.
The LM5112Q1SDX/NOPB is a dual N-channel gate driver, featuring an integrated high-side and low-side MOSFET with job performance ratings at 600V each. The MOSFET drivers are integrated with two high current output drivers, one per MOSFET, each capable of handling a large number of N-channel MOSFETs and IGBTs in parallel. It supports a wide range of output voltages, between 2V and 20V, so that the device can be used in multiple applications, such as DC-DC converters and motor control.
The LM5112Q1SDX/NOPB is designed to reduce time-to-market, integrate functions, and provide reliable power switching operation, so that users benefit from smaller size, lower costs, and quicker time-to-market. It also helps to optimize system efficiency and reduce ripple from an unbalanced load.
An integrated start-up voltage source is provided to ensure a fast gate-drive current for start-up of N-channel MOSFETs and IGBTs. This ensures that the switching process begins with low losses and is not subject to input supply variations. Furthermore, the high current output drivers can handle up to 6A of peak current, providing even better performance when switching larger loads.
In addition to its integrated high-side and low-side MOSFETs and output driver, the LM5112Q1SDX/NOPB features an active current limitation system, enabling it to respond faster than other devices in similar applications. This fast response helps to reduce power dissipation during current overload with minimal circuit complexity.
The LM5112Q1SDX/NOPB also has built-in protection features that can protect the device from over-temperature, over-voltage, under-voltage, and over-current conditions. It is designed to be tolerant of large common-mode transients and voltage surges, making it highly immune to noise in the system. The internal control logic allows for simple and reliable control of the gate driver with a logic input signal.
The LM5112Q1SDX/NOPB is packaged in a tiny 6-pin LLP (Low Lead Count) package and is available in an extended temperature range, making it ideally suited for applications in extreme temperature environments. Thanks to its low on-resistance, controlled performance, enhanced protection features, and low lead count package, it meets the requirements of the most demanding high-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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